---
title: "CCD Detector Array"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:CCD_DETECTOR_ARRAY"
  data_integrity_hash: "36f95a40db9e29030b80fd9870e5ba42"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:CCD_DETECTOR_ARRAY"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/ccd-detector-array.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/ccd-detector-array"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "200-1100 nm wavelength, -40°C to +85°C ambient temperature, 3.3-5.0 VDC supply voltage"
    unit: "pixels"
engineering_limits:
  max_safe_operating_point:
    value: 400
    unit: "nm"
    consequence: "Silicon bandgap limitation (1.12 eV) causing photon absorption cutoff, thermally generated electron-hole pairs in depletion region, Johnson-Nyquist noise in readout circuitry"
fmea_matrix_quantitative:
  - node_1:
      trigger: "UV photon flux exceeding 10^15 photons/cm²/s at 250 nm"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Fused silica window with MgF₂ coating providing 99.5% UV attenuation below 300 nm"
  - node_2:
      trigger: "Thermal cycling between -40°C and +85°C at 10°C/min rate"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Kovar interposer (CTE: 5.3 ppm/°C) with gold-tin eutectic bonding (melting point: 280°C)"
bom_nodes:
  photosensitive-region:
    type: "component"
    urn: "URN:CNFX:ME:PHOTOSENSITIVE_REGION"
    interface_type: "physical-logic-coupled"
  charge-transfer-structure:
    type: "component"
    urn: "URN:CNFX:ME:CHARGE_TRANSFER_STRUCTURE"
    interface_type: "physical-logic-coupled"
  output-amplifier:
    type: "part"
    urn: "URN:CNFX:ME:OUTPUT_AMPLIFIER"
    interface_type: "physical-logic-coupled"
  protective-window:
    type: "component"
    urn: "URN:CNFX:ME:PROTECTIVE_WINDOW"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 12233:2017 (PHOTOGRAPHY - ELECTRONIC STILL-PICTURE IMAGING - RESOLUTION AND SPATIAL FREQUENCY RESPONSES)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/ccd-detector-array.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "461ce7134038ecad0bce500f54a082831b1d20f14d41533fc6b3cad517562d6a"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: CCD Detector Array

## 1. Technical Definition
A photosensitive electronic component that converts light signals into electrical signals for detection and measurement in optical spectrometers.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **200-1100 nm wavelength, -40°C to +85°C ambient temperature, 3.3-5.0 VDC supply voltage**. Failure boundary: **Quantum efficiency drops below 15% at 400 nm, dark current exceeds 1000 e-/pixel/s at 25°C, readout noise surpasses 50 e- RMS**, Mechanism: **Silicon bandgap limitation (1.12 eV) causing photon absorption cutoff, thermally generated electron-hole pairs in depletion region, Johnson-Nyquist noise in readout circuitry**.

### 2.1 Analytical Physics Model
Governed by the **Rayleigh Resolution Criterion**:

> **Primary Equation**: $d = \frac{0.61 \lambda}{NA}$  
> **Engineering Impact**: Defines the theoretical limit of machine vision systems.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| \lambda | Wavelength | Engineering Constant |
| NA | Numerical Aperture | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| UV photon flux exceeding 10^15 photons/cm²/s at 250 nm | 8 | Silicon lattice displacement damage causing permanent quantum efficiency degradation | Fused silica window with MgF₂ coating providing 99.5% UV attenuation below 300 nm |
| Thermal cycling between -40°C and +85°C at 10°C/min rate | 8 | CTE mismatch (silicon: 2.6 ppm/°C, ceramic package: 7.0 ppm/°C) inducing microcrack propagation in wire bonds | Kovar interposer (CTE: 5.3 ppm/°C) with gold-tin eutectic bonding (melting point: 280°C) |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | pixels | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Output Amplifier](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/output-amplifier.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Optical Spectrometer**, **Signal Conditioning Electronics**, **Temperature Control System**  
**Downstream Applications**: Medical Diagnostic Equipment, Environmental Monitoring Systems, Industrial Quality Control Instruments  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the primary application of this CCD detector array?
**A**: This CCD detector array is designed for optical spectrometers, where it converts light signals into electrical signals for precise detection and measurement in analytical instruments.

### Q: What materials are used in the construction of this CCD detector?
**A**: The detector is constructed using silicon as the photosensitive material, with silicon dioxide and polycrystalline silicon for insulation and circuitry, and aluminum for electrical connections.

### Q: How does the charge transfer structure improve detector performance?
**A**: The charge transfer structure efficiently moves accumulated electrical charges from the photosensitive region to the output amplifier, minimizing signal loss and enabling high-speed, low-noise readout for accurate measurements.

## 6. Manufacturing Compliance
- ISO 12233:2017 (PHOTOGRAPHY - ELECTRONIC STILL-PICTURE IMAGING - RESOLUTION AND SPATIAL FREQUENCY RESPONSES)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: CCD Detector Array](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/ccd-detector-array)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: CCD_DETECTOR_ARRAY | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: a3f449cb
