---
title: "Interconnect Matrix"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:INTERCONNECT_MATRIX"
  data_integrity_hash: "c369a5e3d8c5f158333d9c9263a905eb"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:INTERCONNECT_MATRIX"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/interconnect-matrix.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/interconnect-matrix"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.8-1.2 V at 25°C ambient temperature, 0.5-2.0 GHz signal frequency"
    unit: "μm"
engineering_limits:
  max_safe_operating_point:
    value: 10
    unit: "MV"
    consequence: "Electromigration due to momentum transfer from electrons to metal ions at high current densities, causing void formation and hillock growth in copper interconnects"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Thermal expansion mismatch between silicon (2.6×10⁻⁶/K) and copper (17×10⁻⁶/K) at ΔT &gt; 150°C"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Insertion of tungsten barrier layers (CTE 4.5×10⁻⁶/K) and stress-optimized dielectric stack"
  - node_2:
      trigger: "Time-dependent dielectric breakdown at electric field &gt; 8 MV/cm for &gt; 1000 hours"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Implementation of low-k dielectric materials (k=2.5) with fluorine-doped silica glass and atomic layer deposition barrier"
bom_nodes:
  conductive-trace:
    type: "component"
    urn: "URN:CNFX:ME:CONDUCTIVE_TRACE"
    interface_type: "physical-logic-coupled"
  via:
    type: "component"
    urn: "URN:CNFX:ME:VIA"
    interface_type: "physical-logic-coupled"
  dielectric-layer:
    type: "component"
    urn: "URN:CNFX:ME:DIELECTRIC_LAYER"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/interconnect-matrix.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "98c152bcea795ca377ed8212b2e5e8019e882576278c60b51c8e8764b80276c3"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Interconnect Matrix

## 1. Technical Definition
A structured network of conductive pathways within a logic gates array that enables signal routing and electrical connections between individual logic gates.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.8-1.2 V at 25°C ambient temperature, 0.5-2.0 GHz signal frequency**. Failure boundary: **Electromigration occurs at current density &gt; 1.0×10⁶ A/cm², dielectric breakdown at electric field &gt; 10 MV/cm**, Mechanism: **Electromigration due to momentum transfer from electrons to metal ions at high current densities, causing void formation and hillock growth in copper interconnects**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Thermal expansion mismatch between silicon (2.6×10⁻⁶/K) and copper (17×10⁻⁶/K) at ΔT &gt; 150°C | 8 | Interconnect delamination and via cracking | Insertion of tungsten barrier layers (CTE 4.5×10⁻⁶/K) and stress-optimized dielectric stack |
| Time-dependent dielectric breakdown at electric field &gt; 8 MV/cm for &gt; 1000 hours | 8 | Insulation failure and short circuit between adjacent signal lines | Implementation of low-k dielectric materials (k=2.5) with fluorine-doped silica glass and atomic layer deposition barrier |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | μm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Wafer Prober**, **Wire Bonding Machine**, **Automated Optical Inspection System**  
**Downstream Applications**: Microprocessors, FPGA Chips, ASIC Devices  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the primary function of an interconnect matrix in logic gate arrays?
**A**: The interconnect matrix provides structured conductive pathways that enable precise signal routing and electrical connections between individual logic gates within an array, facilitating integrated circuit functionality.

### Q: Why are copper and silicon dioxide commonly used materials in interconnect matrices?
**A**: Copper offers excellent electrical conductivity for efficient signal transmission, while silicon dioxide serves as an effective dielectric layer to prevent electrical interference between conductive traces.

### Q: How does the BOM (Conductive Trace, Via, Dielectric Layer) contribute to interconnect matrix performance?
**A**: Conductive traces carry electrical signals, vias create vertical connections between layers, and dielectric layers provide insulation - together they ensure reliable signal routing with minimal crosstalk in logic gate arrays.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS

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### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Interconnect Matrix](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/interconnect-matrix)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **3** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: INTERCONNECT_MATRIX | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 749948e3
