---
title: "Low-Noise Amplifier (LNA)"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:LOW_NOISE_AMPLIFIER_LNA"
  data_integrity_hash: "7b564d45cfd52d5c04d103edb1330f48"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:LOW_NOISE_AMPLIFIER_LNA"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/low-noise-amplifier-lna.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/low-noise-amplifier-lna"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "1.0-3.0 dB noise figure at 1.0-6.0 GHz frequency range, -40°C to +85°C ambient temperature"
    unit: "dB"
engineering_limits:
  max_safe_operating_point:
    value: 5.0
    unit: "dB"
    consequence: "Thermal runaway due to semiconductor junction heating (Boltzmann constant k=1.380649×10⁻²³ J/K), electron-hole pair generation-recombination noise (Shot noise), lattice vibration-induced thermal noise (Johnson-Nyquist noise)"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Input power surge exceeding -5 dBm"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Input limiter circuit with PIN diodes, automatic gain control feedback loop"
  - node_2:
      trigger: "DC bias voltage instability beyond ±5% of 3.3V nominal"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Low-noise voltage regulator with 0.1% line regulation, temperature-compensated bias network"
bom_nodes:
  transistor:
    type: "component"
    urn: "URN:CNFX:ME:TRANSISTOR"
    interface_type: "physical-logic-coupled"
  input-matching-network:
    type: "part"
    urn: "URN:CNFX:ME:INPUT_MATCHING_NETWORK"
    interface_type: "physical-logic-coupled"
  output-matching-network:
    type: "part"
    urn: "URN:CNFX:ME:OUTPUT_MATCHING_NETWORK"
    interface_type: "physical-logic-coupled"
  bias-circuit:
    type: "component"
    urn: "URN:CNFX:ME:BIAS_CIRCUIT"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
  - standard: "CE MARKING (EU DIRECTIVE 2014/53/EU FOR RADIO EQUIPMENT)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/low-noise-amplifier-lna.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "797447d63b63e5142d75d4935a67b2eb038c7dff589140a97aaece8fb584f834"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Low-Noise Amplifier (LNA)

## 1. Technical Definition
An electronic amplifier that amplifies very weak signals while adding minimal additional noise.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **1.0-3.0 dB noise figure at 1.0-6.0 GHz frequency range, -40°C to +85°C ambient temperature**. Failure boundary: **Noise figure degradation beyond 5.0 dB, input power exceeding -10 dBm (1 dB compression point), junction temperature surpassing 150°C**, Mechanism: **Thermal runaway due to semiconductor junction heating (Boltzmann constant k=1.380649×10⁻²³ J/K), electron-hole pair generation-recombination noise (Shot noise), lattice vibration-induced thermal noise (Johnson-Nyquist noise)**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Input power surge exceeding -5 dBm | 8 | Transistor gain compression and intermodulation distortion | Input limiter circuit with PIN diodes, automatic gain control feedback loop |
| DC bias voltage instability beyond ±5% of 3.3V nominal | 8 | Bias point drift causing noise figure degradation and gain variation | Low-noise voltage regulator with 0.1% line regulation, temperature-compensated bias network |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | dB | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Input Matching Network](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/input-matching-network.md) `(Standalone System)`
- [Output Matching Network](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/output-matching-network.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Signal Generator**, **Spectrum Analyzer**, **DC Power Supply**  
**Downstream Applications**: Satellite Communication Systems, Wireless Base Stations, Medical Imaging Devices  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the primary function of a Low-Noise Amplifier (LNA) in electronic manufacturing?
**A**: An LNA amplifies very weak signals from antennas or sensors while adding minimal additional noise, crucial for maintaining signal integrity in RF and optical systems.

### Q: Which material is best for high-frequency LNA applications: GaAs, SiGe, or CMOS Silicon?
**A**: Gallium Arsenide (GaAs) is typically preferred for high-frequency applications due to its superior electron mobility and low-noise performance, though SiGe offers a cost-effective balance, and CMOS Silicon is ideal for integrated circuit designs.

### Q: What are the key components in a Low-Noise Amplifier BOM?
**A**: The essential BOM components include a Transistor (the amplifying element), Bias Circuit (for stable operation), and Input and Output Matching Networks (to optimize signal transfer and minimize reflections).

## 6. Manufacturing Compliance
- ISO 9001:2015 QUALITY MANAGEMENT SYSTEMS
- CE MARKING (EU DIRECTIVE 2014/53/EU FOR RADIO EQUIPMENT)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Low-Noise Amplifier (LNA)](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/low-noise-amplifier-lna)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: LOW_NOISE_AMPLIFIER_LNA | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 6c8c64ba
