---
title: "Memory Module"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:MEMORY_MODULE"
  data_integrity_hash: "80c7d0859560c395a703d422b8124e12"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:MEMORY_MODULE"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/memory-module.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/memory-module"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.95-1.05 V (supply voltage), -40°C to 85°C (ambient temperature), 0-100% relative humidity (non-condensing)"
    unit: "GB"
engineering_limits:
  max_safe_operating_point:
    value: 1.1
    unit: "V"
    consequence: "Electromigration at &gt;1.1 V causing open circuits in copper interconnects, dielectric breakdown at &gt;125°C junction temperature, charge trap generation in floating gate transistors exceeding 10^12 cycles"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Alpha particle strike from packaging materials releasing 5-9 MeV"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Error Correction Code with Hamming distance 3, triple modular redundancy voting logic"
  - node_2:
      trigger: "Thermal cycling between -40°C and 125°C at 1000 cycles"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Underfill epoxy with CTE 12 ppm/°C, copper pillar bump interconnects"
bom_nodes:
  memory-chips:
    type: "component"
    urn: "URN:CNFX:ME:MEMORY_CHIPS"
    interface_type: "physical-logic-coupled"
  pcb-printed-circuit-board:
    type: "component"
    urn: "URN:CNFX:ME:PCB_PRINTED_CIRCUIT_BOARD"
    interface_type: "physical-logic-coupled"
  memory-controller:
    type: "part"
    urn: "URN:CNFX:ME:MEMORY_CONTROLLER"
    interface_type: "physical-logic-coupled"
  connector-pins:
    type: "component"
    urn: "URN:CNFX:ME:CONNECTOR_PINS"
    interface_type: "physical-logic-coupled"
  heat-spreader:
    type: "component"
    urn: "URN:CNFX:ME:HEAT_SPREADER"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO/IEC 7816-3:2006 (IDENTIFICATION CARDS - INTEGRATED CIRCUIT CARDS)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/memory-module.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "665a8a4fb3e8acbb010cfa2b13828bcf580a4526634a38da2a8e106b36d610ac"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Memory Module

## 1. Technical Definition
A hardware component that stores data and instructions for processing by a control unit or signal processor.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.95-1.05 V (supply voltage), -40°C to 85°C (ambient temperature), 0-100% relative humidity (non-condensing)**. Failure boundary: **1.1 V (supply voltage overstress), 125°C (junction temperature), 10^12 write/erase cycles (NAND flash endurance)**, Mechanism: **Electromigration at &gt;1.1 V causing open circuits in copper interconnects, dielectric breakdown at &gt;125°C junction temperature, charge trap generation in floating gate transistors exceeding 10^12 cycles**.

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Alpha particle strike from packaging materials releasing 5-9 MeV | 8 | Single Event Upset causing bit flip in SRAM cell | Error Correction Code with Hamming distance 3, triple modular redundancy voting logic |
| Thermal cycling between -40°C and 125°C at 1000 cycles | 8 | Solder joint fatigue crack propagation exceeding 0.5 mm | Underfill epoxy with CTE 12 ppm/°C, copper pillar bump interconnects |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | GB | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Memory controller](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/memory-controller.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Automated Test Handler**, **Burn-in Oven**, **ESD-Safe Workstation**  
**Downstream Applications**: Desktop Computers, Laptop Computers, Server Systems  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What materials are used in memory module construction?
**A**: Memory modules are constructed using semiconductor silicon for memory chips, copper traces for electrical connections, PCB substrate as the base, solder for component attachment, and plastic casing for protection.

### Q: What components are included in a memory module BOM?
**A**: A typical memory module Bill of Materials includes connector pins, heat spreader, memory chips, memory controller, and the Printed Circuit Board (PCB) that holds all components together.

### Q: How do memory modules function in electronic devices?
**A**: Memory modules store data and instructions that are processed by control units or signal processors in computers and electronic devices, enabling temporary data access for faster system performance.

## 6. Manufacturing Compliance
- ISO/IEC 7816-3:2006 (IDENTIFICATION CARDS - INTEGRATED CIRCUIT CARDS)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Memory Module](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/memory-module)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **5** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: MEMORY_MODULE | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 78aab02a
