---
title: "Phase Shifter"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:PHASE_SHIFTER"
  data_integrity_hash: "d82802d0b9b4a20cc529bbcc6560b910"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PHASE_SHIFTER"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/phase-shifter.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/phase-shifter"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0-360 degrees phase shift at 1-18 GHz frequency range, 0-30 dB insertion loss, -40°C to +85°C operating temperature"
    unit: "degrees"
engineering_limits:
  max_safe_operating_point:
    value: 5
    unit: "°"
    consequence: "Dielectric material polarization hysteresis at &gt;10^6 switching cycles, ferrite core magnetic saturation above 0.3 T flux density, microstrip conductor electromigration at &gt;10^5 A/cm² current density, thermal expansion mismatch between alumina substrate (CTE 6.5 ppm/°C) and silicon semiconductor (CTE 2.6 ppm/°C)"
fmea_matrix_quantitative:
  - node_1:
      trigger: "RF power input exceeding 1 W continuous wave at 10 GHz, creating standing wave ratio &gt;3:1"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrate directional coupler with -20 dB tap for real-time VSWR monitoring, implement automatic power reduction circuit with PIN diode attenuator"
  - node_2:
      trigger: "DC bias voltage ripple exceeding 100 mVpp on control lines, inducing phase jitter &gt;0.5° RMS"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Implement low-noise LDO regulator with &lt;10 μV RMS output noise, add π-filter network with 100 nF ceramic and 10 μF tantalum capacitors"
bom_nodes:
  transmission-line:
    type: "part"
    urn: "URN:CNFX:ME:TRANSMISSION_LINE"
    interface_type: "physical-logic-coupled"
  control-element:
    type: "part"
    urn: "URN:CNFX:ME:CONTROL_ELEMENT"
    interface_type: "physical-logic-coupled"
  bias-circuit:
    type: "part"
    urn: "URN:CNFX:ME:BIAS_CIRCUIT"
    interface_type: "physical-logic-coupled"
  housing:
    type: "component"
    urn: "URN:CNFX:ME:HOUSING"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/phase-shifter.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "9fe9cc07fd0aa03874a5827650c919d33d419e6efb325c6dc7ad976a5bd783b8"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Phase Shifter

## 1. Technical Definition
A device that adjusts the phase relationship between signals in a feed network

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0-360 degrees phase shift at 1-18 GHz frequency range, 0-30 dB insertion loss, -40°C to +85°C operating temperature**. Failure boundary: **Phase shift accuracy degradation beyond ±5°, insertion loss exceeding 35 dB, VSWR exceeding 2.0:1, dielectric breakdown at &gt;500 V/m electric field strength**, Mechanism: **Dielectric material polarization hysteresis at &gt;10^6 switching cycles, ferrite core magnetic saturation above 0.3 T flux density, microstrip conductor electromigration at &gt;10^5 A/cm² current density, thermal expansion mismatch between alumina substrate (CTE 6.5 ppm/°C) and silicon semiconductor (CTE 2.6 ppm/°C)**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| RF power input exceeding 1 W continuous wave at 10 GHz, creating standing wave ratio &gt;3:1 | 8 | Ferrite core thermal runaway reaching Curie temperature (580°C for YIG), causing permanent magnetic property loss | Integrate directional coupler with -20 dB tap for real-time VSWR monitoring, implement automatic power reduction circuit with PIN diode attenuator |
| DC bias voltage ripple exceeding 100 mVpp on control lines, inducing phase jitter &gt;0.5° RMS | 8 | Varactor diode junction capacitance nonlinear variation, producing phase vs. voltage hysteresis &gt;3% | Implement low-noise LDO regulator with &lt;10 μV RMS output noise, add π-filter network with 100 nF ceramic and 10 μF tantalum capacitors |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | degrees | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Transmission Line](https://cnfx.com/llms/industry/electrical-equipment-manufacturing/product/transmission-line.md) `(Standalone System)`
- [Control Element](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/control-element.md) `(Standalone System)`
- [Bias Circuit](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/bias-circuit.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Signal Generator**, **Vector Network Analyzer**, **RF Power Supply**  
**Downstream Applications**: Phased Array Antennas, Satellite Communication Systems, Radar Systems  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What applications are phase shifters used for in electronic manufacturing?
**A**: Phase shifters are critical in phased array antennas, beamforming systems, radar, satellite communications, and RF testing equipment where precise signal phase control is required.

### Q: How do semiconductor components like PIN diodes function in phase shifters?
**A**: PIN diodes and varactors act as control elements, altering the electrical length of transmission lines through switching or variable capacitance to achieve precise phase adjustments with fast response times.

### Q: What are the advantages of using PTFE or ceramic dielectric substrates?
**A**: PTFE offers low loss and stable electrical properties across frequencies, while ceramic substrates provide excellent thermal stability and mechanical rigidity for high-frequency microwave applications.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Phase Shifter](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/phase-shifter)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PHASE_SHIFTER | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: b926097b
