---
title: "Photocoupler Assembly"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:PHOTOCOUPLER_ASSEMBLY"
  data_integrity_hash: "5537096a58cb6fcc11212c5147834407"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PHOTOCOUPLER_ASSEMBLY"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photocoupler-assembly.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photocoupler-assembly"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.5-1.2 mA input current, 3.3-24 V output voltage, -40 to 100°C ambient temperature"
    unit: "kV"
engineering_limits:
  max_safe_operating_point:
    value: 1.5
    unit: "mA"
    consequence: "LED quantum efficiency degradation at high current densities (Schockley-Read-Hall recombination), SiO2 dielectric breakdown at 10 MV/m electric field strength, thermal expansion coefficient mismatch (CTE: LED 5.7×10^-6/K vs. encapsulant 20×10^-6/K) causing delamination"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Transient voltage spike exceeding 1.5 kV/μs dv/dt"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated dv/dt limiter with 100 Ω series resistance and 100 pF shunt capacitance"
  - node_2:
      trigger: "Moisture ingress exceeding 85% RH at 85°C for 1000 hours"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Hermetic sealing with Au-Sn eutectic solder (melting point 280°C) and getter material"
bom_nodes:
  infrared-led-die:
    type: "component"
    urn: "URN:CNFX:ME:INFRARED_LED_DIE"
    interface_type: "physical-logic-coupled"
  phototransistor-die:
    type: "component"
    urn: "URN:CNFX:ME:PHOTOTRANSISTOR_DIE"
    interface_type: "physical-logic-coupled"
  molded-package:
    type: "part"
    urn: "URN:CNFX:ME:MOLDED_PACKAGE"
    interface_type: "physical-logic-coupled"
  lead-frame:
    type: "component"
    urn: "URN:CNFX:ME:LEAD_FRAME"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 (QUALITY MANAGEMENT SYSTEMS)"
    scope: "Verified Engineering Specification"
  - standard: "CE MARKING (EU DIRECTIVE 2014/35/EU FOR LOW VOLTAGE EQUIPMENT)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photocoupler-assembly.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "07d822bab9da4d47b73c790e82d37ac7fa28b4d2cfbb97afe691dfb29c8ad3d4"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Photocoupler Assembly

## 1. Technical Definition
A complete assembly containing the core photocoupler device and its supporting electrical/mechanical elements, designed for integration into an isolation barrier system.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.5-1.2 mA input current, 3.3-24 V output voltage, -40 to 100°C ambient temperature**. Failure boundary: **Input current exceeds 1.5 mA causing LED degradation, output voltage exceeds 30 V causing dielectric breakdown, ambient temperature exceeds 125°C causing thermal runaway**, Mechanism: **LED quantum efficiency degradation at high current densities (Schockley-Read-Hall recombination), SiO2 dielectric breakdown at 10 MV/m electric field strength, thermal expansion coefficient mismatch (CTE: LED 5.7×10^-6/K vs. encapsulant 20×10^-6/K) causing delamination**.

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Transient voltage spike exceeding 1.5 kV/μs dv/dt | 8 | Phototransistor latch-up due to parasitic thyristor activation | Integrated dv/dt limiter with 100 Ω series resistance and 100 pF shunt capacitance |
| Moisture ingress exceeding 85% RH at 85°C for 1000 hours | 8 | Delamination at LED-phototransistor interface reducing CTR below 20% | Hermetic sealing with Au-Sn eutectic solder (melting point 280°C) and getter material |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | kV | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Molded Package](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/molded-package.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Automated Pick-and-Place Machine**, **Reflow Soldering Oven**, **Automated Optical Inspection System**  
**Downstream Applications**: Industrial Motor Drives, Medical Diagnostic Equipment, Telecommunications Infrastructure Hardware  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the typical isolation voltage rating for this photocoupler assembly?
**A**: This assembly typically provides isolation voltages ranging from 3.75kV to 5kV RMS, making it suitable for industrial control systems and power electronics applications requiring robust electrical isolation.

### Q: How does the GaAs LED chip enhance performance in this assembly?
**A**: The Gallium Arsenide LED chip offers superior infrared emission efficiency and faster switching speeds compared to traditional materials, resulting in higher current transfer ratios and improved response times for signal isolation applications.

### Q: What environmental protections does the epoxy molding compound provide?
**A**: The epoxy molding compound provides excellent moisture resistance (typically MSL 3 rating), thermal stability up to 150°C, and mechanical protection against vibration and shock, ensuring reliable operation in harsh industrial environments.

## 6. Manufacturing Compliance
- ISO 9001:2015 (QUALITY MANAGEMENT SYSTEMS)
- CE MARKING (EU DIRECTIVE 2014/35/EU FOR LOW VOLTAGE EQUIPMENT)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Photocoupler Assembly](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photocoupler-assembly)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PHOTOCOUPLER_ASSEMBLY | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 38f0f5bd
