---
title: "Photodetector array"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:PHOTODETECTOR_ARRAY"
  data_integrity_hash: "2838e6db5e1ebecf73829e1b4176311d"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PHOTODETECTOR_ARRAY"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-array.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-array"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.1-1000 μW/cm² optical power density, -40°C to +85°C ambient temperature"
    unit: "mm"
engineering_limits:
  max_safe_operating_point:
    value: "N/A"
    unit: "N/A"
    consequence: "Photodiode reverse bias junction breakdown under excessive photon flux, exceeding semiconductor bandgap energy absorption capacity (1.12 eV for silicon)"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge (ESD) exceeding 1000V HBM"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated ESD protection diodes with 500V clamping voltage, antistatic handling procedures"
  - node_2:
      trigger: "Thermal cycling between -40°C and +125°C at 10 cycles/hour"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Gold-tin eutectic solder with 96.5Sn-3.0Ag-0.5Cu composition, thermal stress relief structures"
bom_nodes:
  photodiode-elements:
    type: "component"
    urn: "URN:CNFX:ME:PHOTODIODE_ELEMENTS"
    interface_type: "physical-logic-coupled"
  interconnection-matrix:
    type: "part"
    urn: "URN:CNFX:ME:INTERCONNECTION_MATRIX"
    interface_type: "physical-logic-coupled"
  protective-window:
    type: "component"
    urn: "URN:CNFX:ME:PROTECTIVE_WINDOW"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9022-11:2015 (OPTICAL COMPONENTS - ENVIRONMENTAL TEST METHODS)"
    scope: "Verified Engineering Specification"
  - standard: "ANSI/ESD S20.20-2021 (ELECTROSTATIC DISCHARGE CONTROL PROGRAM)"
    scope: "Verified Engineering Specification"
  - standard: "DIN EN 60747-5-2:2003 (DISCRETE SEMICONDUCTOR DEVICES - OPTOELECTRONIC DEVICES)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-array.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "e37173d7646f9aa9915f1b9edbe4264953d527ea4b7486f9c8504c650fa1899b"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Photodetector array

## 1. Technical Definition
An array of photodetectors that converts optical signals into electrical signals for position or motion detection.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.1-1000 μW/cm² optical power density, -40°C to +85°C ambient temperature**. Failure boundary: **Saturation at 1500 μW/cm² optical input causing nonlinear response, permanent damage at 2000 μW/cm² due to photodiode junction breakdown**, Mechanism: **Photodiode reverse bias junction breakdown under excessive photon flux, exceeding semiconductor bandgap energy absorption capacity (1.12 eV for silicon)**.

### 2.1 Analytical Physics Model
Governed by the **Rayleigh Resolution Criterion**:

> **Primary Equation**: $d = \frac{0.61 \lambda}{NA}$  
> **Engineering Impact**: Defines the theoretical limit of machine vision systems.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| \lambda | Wavelength | Engineering Constant |
| NA | Numerical Aperture | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge (ESD) exceeding 1000V HBM | 8 | Photodiode junction short circuit, dark current increase to &gt;10 μA | Integrated ESD protection diodes with 500V clamping voltage, antistatic handling procedures |
| Thermal cycling between -40°C and +125°C at 10 cycles/hour | 8 | Solder joint fatigue failure, interconnect resistance increase &gt;100 mΩ | Gold-tin eutectic solder with 96.5Sn-3.0Ag-0.5Cu composition, thermal stress relief structures |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | mm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Interconnection matrix](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/interconnection-matrix.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Optical Alignment System**, **Cleanroom Environment**, **Signal Processing Unit**  
**Downstream Applications**: Optical Mouse Sensors, Barcode Scanners, Medical Imaging Devices  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What are the main applications of photodetector arrays in computer and optical product manufacturing?
**A**: Photodetector arrays are essential for position sensing, motion detection, optical encoders, barcode scanners, and automated optical inspection systems in electronics manufacturing.

### Q: How does the choice of material (Si, GaAs, InGaAs) affect photodetector array performance?
**A**: Silicon offers cost-effective visible light detection, GaAs provides higher speed for near-infrared applications, while InGaAs delivers superior sensitivity for longer infrared wavelengths in specialized optical systems.

### Q: What maintenance considerations are important for photodetector arrays with protective windows?
**A**: Regular cleaning of protective windows is crucial to maintain optical clarity. Avoid abrasive materials, use appropriate optical cleaning solutions, and ensure proper environmental sealing to prevent dust and moisture ingress.

## 6. Manufacturing Compliance
- ISO 9022-11:2015 (OPTICAL COMPONENTS - ENVIRONMENTAL TEST METHODS)
- ANSI/ESD S20.20-2021 (ELECTROSTATIC DISCHARGE CONTROL PROGRAM)
- DIN EN 60747-5-2:2003 (DISCRETE SEMICONDUCTOR DEVICES - OPTOELECTRONIC DEVICES)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Photodetector array](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-array)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **3** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PHOTODETECTOR_ARRAY | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: ae6eeabc
