---
title: "Photodetector Module"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:PHOTODETECTOR_MODULE"
  data_integrity_hash: "9fb08cbd59b54cd782ecb67a13afcc12"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PHOTODETECTOR_MODULE"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-module.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-module"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "400-1100 nm wavelength, 0.1-100 mW/cm² irradiance, -40°C to +85°C temperature"
    unit: "nm"
engineering_limits:
  max_safe_operating_point:
    value: 125
    unit: "°C"
    consequence: "Thermal runaway from excessive photocurrent (P=IV heating), avalanche breakdown at reverse bias &gt;5V, lattice damage from photon energy &gt;1.1 eV exceeding silicon bandgap"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Reverse bias voltage surge to 7V during power transients"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Zener diode clamping at 4.7V parallel to photodiode"
  - node_2:
      trigger: "Ambient temperature rise to 95°C with 80 mW/cm² incident light"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Thermal pad with 2.5°C/W resistance to heatsink"
bom_nodes:
  photodiode-chip:
    type: "component"
    urn: "URN:CNFX:ME:PHOTODIODE_CHIP"
    interface_type: "physical-logic-coupled"
  transimpedance-amplifier-tia:
    type: "part"
    urn: "URN:CNFX:ME:TRANSIMPEDANCE_AMPLIFIER_TIA"
    interface_type: "physical-logic-coupled"
  optical-windowfilter:
    type: "component"
    urn: "URN:CNFX:ME:OPTICAL_WINDOWFILTER"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
  - standard: "CE MARKING - COMPLIANCE WITH EU EMC DIRECTIVE 2014/30/EU AND LOW VOLTAGE DIRECTIVE 2014/35/EU"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-module.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "dc994391bb9daaeb2327edb2d2e5028326a0fe8fd16a3f1ffad9fde070b9f39d"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Photodetector Module

## 1. Technical Definition
A modular electronic component that converts incident light into an electrical signal.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **400-1100 nm wavelength, 0.1-100 mW/cm² irradiance, -40°C to +85°C temperature**. Failure boundary: **Photodiode junction temperature exceeds 125°C, incident light intensity surpasses 150 mW/cm², reverse bias voltage exceeds 5V**, Mechanism: **Thermal runaway from excessive photocurrent (P=IV heating), avalanche breakdown at reverse bias &gt;5V, lattice damage from photon energy &gt;1.1 eV exceeding silicon bandgap**.

### 2.1 Analytical Physics Model
Governed by the **Rayleigh Resolution Criterion**:

> **Primary Equation**: $d = \frac{0.61 \lambda}{NA}$  
> **Engineering Impact**: Defines the theoretical limit of machine vision systems.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| \lambda | Wavelength | Engineering Constant |
| NA | Numerical Aperture | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Reverse bias voltage surge to 7V during power transients | 8 | Avalanche breakdown causing permanent junction damage | Zener diode clamping at 4.7V parallel to photodiode |
| Ambient temperature rise to 95°C with 80 mW/cm² incident light | 8 | Thermal runaway increasing dark current to 100 nA (10x nominal) | Thermal pad with 2.5°C/W resistance to heatsink |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | nm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Transimpedance Amplifier (TIA)](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/transimpedance-amplifier-tia.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Optical Alignment Station**, **Cleanroom Assembly Bench**, **Signal Conditioning Unit**  
**Downstream Applications**: Fiber Optic Communication Systems, Medical Imaging Devices, Industrial Automation Sensors  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the typical response time of this photodetector module?
**A**: Our photodetector modules typically offer response times ranging from nanoseconds to microseconds, depending on the semiconductor material and TIA configuration, making them suitable for high-speed optical detection applications.

### Q: Can this module operate in harsh industrial environments?
**A**: Yes, the protective metal/plastic housing and ceramic/PCB substrate provide excellent durability against dust, moisture, and temperature variations, ensuring reliable performance in demanding industrial settings.

### Q: What wavelength ranges are supported by different semiconductor options?
**A**: Silicon photodiodes cover 190-1100 nm for visible/NIR detection, while InGaAs sensors extend to 800-2600 nm for specialized infrared applications. Optical filters can be customized for specific wavelength bands.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS
- CE MARKING - COMPLIANCE WITH EU EMC DIRECTIVE 2014/30/EU AND LOW VOLTAGE DIRECTIVE 2014/35/EU

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Photodetector Module](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetector-module)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **3** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PHOTODETECTOR_MODULE | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: ab541e01
