---
title: "Photodetector/sensor"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:PHOTODETECTORSENSOR"
  data_integrity_hash: "3ea512d523b274279f4cee575ae98066"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PHOTODETECTORSENSOR"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetectorsensor.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetectorsensor"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "1.0e-12 to 1.0e-3 W/cm² (optical power density), 400-1100 nm (wavelength), -40°C to +85°C (temperature)"
    unit: "nm"
engineering_limits:
  max_safe_operating_point:
    value: 1.0
    unit: "e"
    consequence: "Photodiode junction thermal runaway at &gt;100 mW continuous optical power, lattice defect generation from &gt;5.0e13 photons/cm²·s UV exposure, dopant diffusion at &gt;125°C for silicon-based sensors"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge exceeding 1000 V HBM (Human Body Model)"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated silicon-controlled rectifier ESD protection with 8 kV IEC 61000-4-2 rating"
  - node_2:
      trigger: "Ambient temperature cycling between -55°C and +125°C at 10°C/min rate"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Gold ball bonding with 25 μm diameter and 150 μm loop height, encapsulated in CTE-matched silicone gel (3.2 ppm/°C)"
bom_nodes:
  photosensitive-diode:
    type: "component"
    urn: "URN:CNFX:ME:PHOTOSENSITIVE_DIODE"
    interface_type: "physical-logic-coupled"
  amplifier-circuit:
    type: "part"
    urn: "URN:CNFX:ME:AMPLIFIER_CIRCUIT"
    interface_type: "physical-logic-coupled"
  optical-window:
    type: "component"
    urn: "URN:CNFX:ME:OPTICAL_WINDOW"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9022-11:2015 (ENVIRONMENTAL TEST METHODS FOR OPTICS AND PHOTONICS)"
    scope: "Verified Engineering Specification"
  - standard: "IEC 60747-5-2:1997 (DISCRETE SEMICONDUCTOR DEVICES - OPTOELECTRONIC DEVICES)"
    scope: "Verified Engineering Specification"
  - standard: "EN 61326-1:2013 (ELECTRICAL EQUIPMENT FOR MEASUREMENT, CONTROL AND LABORATORY USE - EMC REQUIREMENTS)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodetectorsensor.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "9dd0b85c09bd0070bb48e0e7f9837a5505a70f39fed23738ca29b75aba81ee04"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Photodetector/sensor

## 1. Technical Definition
A light-sensitive electronic component that detects and converts optical signals into electrical signals.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **1.0e-12 to 1.0e-3 W/cm² (optical power density), 400-1100 nm (wavelength), -40°C to +85°C (temperature)**. Failure boundary: **Saturation at 1.0e-2 W/cm² optical power density, dark current exceeding 10 nA at 25°C, quantum efficiency dropping below 10% at 300 nm or 1300 nm wavelengths**, Mechanism: **Photodiode junction thermal runaway at &gt;100 mW continuous optical power, lattice defect generation from &gt;5.0e13 photons/cm²·s UV exposure, dopant diffusion at &gt;125°C for silicon-based sensors**.

### 2.1 Analytical Physics Model
Governed by the **Combined Measurement Uncertainty**:

> **Primary Equation**: $u_c = \sqrt{\sum u_i^2}$  
> **Engineering Impact**: Defines the precision confidence interval for inspection.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| u_i | Standard Uncertainty components | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge exceeding 1000 V HBM (Human Body Model) | 8 | PN junction dielectric breakdown with leakage current &gt;1 μA at 5 V reverse bias | Integrated silicon-controlled rectifier ESD protection with 8 kV IEC 61000-4-2 rating |
| Ambient temperature cycling between -55°C and +125°C at 10°C/min rate | 8 | Thermomechanical stress-induced wire bond fracture with resistance increase &gt;5 Ω | Gold ball bonding with 25 μm diameter and 150 μm loop height, encapsulated in CTE-matched silicone gel (3.2 ppm/°C) |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | nm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Amplifier circuit](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/amplifier-circuit.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Wafer Prober**, **Wire Bonder**, **Clean Room Environment**  
**Downstream Applications**: Optical Mice, Medical Imaging Devices, Automotive LiDAR Systems  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What are the main applications of photodetectors in computer and optical product manufacturing?
**A**: Photodetectors are essential in optical drives, fiber optic communication systems, laser printers, barcode scanners, and optical sensors for computer peripherals and electronic devices.

### Q: How do silicon, GaAs, and InGaAs materials differ in photodetector performance?
**A**: Silicon is cost-effective for visible light detection, GaAs offers higher speed for near-infrared applications, and InGaAs provides superior sensitivity for longer infrared wavelengths in specialized optical systems.

### Q: What components are included in a typical photodetector BOM for industrial applications?
**A**: A standard bill of materials includes the photosensitive diode (the core sensing element), an optical window for protection and light focusing, and an amplifier circuit to boost the weak electrical signals for processing.

## 6. Manufacturing Compliance
- ISO 9022-11:2015 (ENVIRONMENTAL TEST METHODS FOR OPTICS AND PHOTONICS)
- IEC 60747-5-2:1997 (DISCRETE SEMICONDUCTOR DEVICES - OPTOELECTRONIC DEVICES)
- EN 61326-1:2013 (ELECTRICAL EQUIPMENT FOR MEASUREMENT, CONTROL AND LABORATORY USE - EMC REQUIREMENTS)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Photodetector/sensor](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/photodetectorsensor)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **3** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PHOTODETECTORSENSOR | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: c008c12d
