---
title: "Position-Sensitive Detector"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:POSITION_SENSITIVE_DETECTOR"
  data_integrity_hash: "bf101209a5fb93bc8deccd16564f0960"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:POSITION_SENSITIVE_DETECTOR"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/position-sensitive-detector.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/position-sensitive-detector"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.1-1000 μW/cm² incident light intensity, 400-1100 nm wavelength, -40°C to +85°C ambient temperature"
    unit: "mm"
engineering_limits:
  max_safe_operating_point:
    value: 150
    unit: "°C"
    consequence: "Thermal runaway from excessive photocurrent heating silicon p-n junction beyond intrinsic carrier concentration threshold (ni=1.5×10¹⁰ cm⁻³ at 300K), charge carrier recombination velocity exceeding 10⁷ cm/s at high illumination"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge exceeding 2000V HBM model"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated silicon-controlled rectifier ESD protection with 0.5 μm snapback voltage design"
  - node_2:
      trigger: "Mechanical stress exceeding 100 MPa from PCB warpage"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Stress-relief mounting with 0.3 mm silicone gel underfill (Young's modulus 0.01 GPa)"
bom_nodes:
  photodiode-array:
    type: "part"
    urn: "URN:CNFX:ME:PHOTODIODE_ARRAY"
    interface_type: "physical-logic-coupled"
  resistive-layer:
    type: "component"
    urn: "URN:CNFX:ME:RESISTIVE_LAYER"
    interface_type: "physical-logic-coupled"
  output-electrodes:
    type: "component"
    urn: "URN:CNFX:ME:OUTPUT_ELECTRODES"
    interface_type: "physical-logic-coupled"
  protective-window:
    type: "component"
    urn: "URN:CNFX:ME:PROTECTIVE_WINDOW"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 (QUALITY MANAGEMENT SYSTEMS)"
    scope: "Verified Engineering Specification"
  - standard: "IEC 61010-1:2010 (SAFETY REQUIREMENTS FOR ELECTRICAL EQUIPMENT)"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/position-sensitive-detector.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "44bec499271b0b7bffabe8b47f3421e9ca4e1066ec882d1df988d29eba1ad2e4"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Position-Sensitive Detector

## 1. Technical Definition
An optoelectronic device that detects the position of a light spot on its active surface and outputs corresponding electrical signals.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.1-1000 μW/cm² incident light intensity, 400-1100 nm wavelength, -40°C to +85°C ambient temperature**. Failure boundary: **Photodiode junction temperature exceeding 150°C, incident light intensity &gt;5000 μW/cm² causing charge carrier saturation, dark current exceeding 100 nA at 25°C**, Mechanism: **Thermal runaway from excessive photocurrent heating silicon p-n junction beyond intrinsic carrier concentration threshold (ni=1.5×10¹⁰ cm⁻³ at 300K), charge carrier recombination velocity exceeding 10⁷ cm/s at high illumination**.

### 2.1 Analytical Physics Model
Governed by the **Rayleigh Resolution Criterion**:

> **Primary Equation**: $d = \frac{0.61 \lambda}{NA}$  
> **Engineering Impact**: Defines the theoretical limit of machine vision systems.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| \lambda | Wavelength | Engineering Constant |
| NA | Numerical Aperture | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge exceeding 2000V HBM model | 8 | Dielectric breakdown of SiO₂ passivation layer (critical field strength 10 MV/cm) | Integrated silicon-controlled rectifier ESD protection with 0.5 μm snapback voltage design |
| Mechanical stress exceeding 100 MPa from PCB warpage | 8 | Microcrack propagation in GaAs substrate (fracture toughness KIC=0.4 MPa·m¹/²) | Stress-relief mounting with 0.3 mm silicone gel underfill (Young's modulus 0.01 GPa) |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | mm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Photodiode Array](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/photodiode-array.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Precision Optical Bench**, **Signal Conditioning Electronics**, **Calibration Light Source**  
**Downstream Applications**: Laser Alignment Systems, Optical Measurement Instruments, Automated Inspection Equipment  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the working principle of a position-sensitive detector?
**A**: A position-sensitive detector works by using a silicon photodiode with a resistive layer. When a light spot hits the active surface, it generates photocurrents that flow through the resistive layer to output electrodes. The position is determined by comparing the current ratios from different electrodes.

### Q: What are the main applications of position-sensitive detectors in electronics manufacturing?
**A**: Position-sensitive detectors are used in optical alignment systems, laser beam positioning, displacement measurement, vibration analysis, and automated optical inspection equipment in electronics and optical product manufacturing.

### Q: How does the protective window affect detector performance?
**A**: The protective window shields the photodiode array from environmental contaminants while maintaining optical clarity. It's designed to minimize light scattering and reflection to ensure accurate position detection without compromising sensitivity or response time.

## 6. Manufacturing Compliance
- ISO 9001:2015 (QUALITY MANAGEMENT SYSTEMS)
- IEC 61010-1:2010 (SAFETY REQUIREMENTS FOR ELECTRICAL EQUIPMENT)

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Position-Sensitive Detector](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/position-sensitive-detector)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: POSITION_SENSITIVE_DETECTOR | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: bdb349ae
