---
title: "RF Switch"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:RF_SWITCH"
  data_integrity_hash: "d282777085c65b96dd7a53acf7b47162"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:RF_SWITCH"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/rf-switch.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/rf-switch"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0.5-6.0 GHz, -40 to +85°C, 0-30 dBm input power"
    unit: "GHz"
engineering_limits:
  max_safe_operating_point:
    value: 3.0
    unit: "dB"
    consequence: "Dielectric breakdown at &gt;100 V/mm electric field strength, thermal expansion mismatch (CTE difference &gt;10 ppm/°C) causing contact separation, electromigration at current densities &gt;10^6 A/cm²"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge exceeding 500 V HBM"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated ESD protection diodes with 0.5 ns response time, hermetic packaging with &lt;1 ppm moisture content"
  - node_2:
      trigger: "Thermal cycling between -40°C and +125°C at 100 cycles/hour"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Gold-plated contacts with 2.5 μm thickness, low-stress mounting with 0.1 mm compliance"
bom_nodes:
  semiconductor-switch-element:
    type: "component"
    urn: "URN:CNFX:ME:SEMICONDUCTOR_SWITCH_ELEMENT"
    interface_type: "physical-logic-coupled"
  bias-circuit:
    type: "component"
    urn: "URN:CNFX:ME:BIAS_CIRCUIT"
    interface_type: "physical-logic-coupled"
  rf-transmission-lines:
    type: "component"
    urn: "URN:CNFX:ME:RF_TRANSMISSION_LINES"
    interface_type: "physical-logic-coupled"
  packageenclosure:
    type: "component"
    urn: "URN:CNFX:ME:PACKAGEENCLOSURE"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
  - standard: "ROHS DIRECTIVE 2011/65/EU - RESTRICTION OF HAZARDOUS SUBSTANCES"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/rf-switch.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "1fa81134014c14e59de1898b66e4171cde922d9aff3bfbb709e62372f174bc74"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: RF Switch

## 1. Technical Definition
An electronic component that selectively routes radio frequency signals between different paths within an RF transceiver module.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0.5-6.0 GHz, -40 to +85°C, 0-30 dBm input power**. Failure boundary: **Insertion loss exceeding 3.0 dB, isolation dropping below 20 dB, VSWR exceeding 2.0:1**, Mechanism: **Dielectric breakdown at &gt;100 V/mm electric field strength, thermal expansion mismatch (CTE difference &gt;10 ppm/°C) causing contact separation, electromigration at current densities &gt;10^6 A/cm²**.

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge exceeding 500 V HBM | 8 | Gate oxide breakdown in semiconductor switches, permanent insertion loss increase | Integrated ESD protection diodes with 0.5 ns response time, hermetic packaging with &lt;1 ppm moisture content |
| Thermal cycling between -40°C and +125°C at 100 cycles/hour | 8 | Solder joint fatigue (Coffin-Manson exponent n=2), contact resistance increase &gt;50 mΩ | Gold-plated contacts with 2.5 μm thickness, low-stress mounting with 0.1 mm compliance |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | GHz | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **RF Signal Generator**, **Vector Network Analyzer**, **Thermal Cycling Chamber**  
**Downstream Applications**: Smartphone RF Front-End Modules, Satellite Communication Systems, Military Radar Equipment  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What are the key materials used in this RF switch?
**A**: This RF switch utilizes Gallium Arsenide (GaAs), Silicon Germanium (SiGe), or Silicon (Si) semiconductor materials, selected based on frequency requirements and performance needs.

### Q: How does this RF switch integrate into RF transceiver modules?
**A**: The RF switch selectively routes radio frequency signals between different paths within transceiver modules, enabling efficient signal management and switching in communication systems.

### Q: What components are included in the BOM for this RF switch?
**A**: The bill of materials includes a Semiconductor Switch Element, Bias Circuit, RF Transmission Lines, and Package/Enclosure, ensuring complete functionality and protection.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS
- ROHS DIRECTIVE 2011/65/EU - RESTRICTION OF HAZARDOUS SUBSTANCES

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: RF Switch](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/rf-switch)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: RF_SWITCH | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: ce140879
