---
title: "State Memory Module"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:STATE_MEMORY_MODULE"
  data_integrity_hash: "9c75b8291072421815a6999080c33eb5"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:STATE_MEMORY_MODULE"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/state-memory-module.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/state-memory-module"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "3.0-3.6 V"
    unit: "GB"
engineering_limits:
  max_safe_operating_point:
    value: 2.7
    unit: "V"
    consequence: "Fowler-Nordheim tunneling-induced oxide breakdown at &gt;4.0V; data loss due to insufficient charge retention at &lt;2.7V"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Alpha particle strike from packaging materials (flux: 0.001-0.01 α/cm²·hr)"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Error Correction Code with Hamming(7,4) encoding and triple modular redundancy"
  - node_2:
      trigger: "Electromigration at current density &gt;1×10⁶ A/cm² (Black's equation: MTF ∝ J⁻ⁿ exp(Eₐ/kT))"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Copper damascene process with TaN diffusion barrier and current density limit of 5×10⁵ A/cm²"
bom_nodes:
  memory-controller-ic:
    type: "part"
    urn: "URN:CNFX:ME:MEMORY_CONTROLLER_IC"
    interface_type: "physical-logic-coupled"
  non-volatile-memory-array:
    type: "component"
    urn: "URN:CNFX:ME:NON_VOLATILE_MEMORY_ARRAY"
    interface_type: "physical-logic-coupled"
  interface-circuitry:
    type: "component"
    urn: "URN:CNFX:ME:INTERFACE_CIRCUITRY"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/state-memory-module.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "5d6979116524d0852076b05a89548184c40d90dc68758d7f4a5a77292a61272f"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: State Memory Module

## 1. Technical Definition
A memory storage component within the State Monitor system that records and retains operational state data.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **3.0-3.6 V**. Failure boundary: **2.7 V (data retention voltage) / 4.0 V (oxide breakdown voltage)**, Mechanism: **Fowler-Nordheim tunneling-induced oxide breakdown at &gt;4.0V; data loss due to insufficient charge retention at &lt;2.7V**.

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Alpha particle strike from packaging materials (flux: 0.001-0.01 α/cm²·hr) | 8 | Single Event Upset causing bit flip in SRAM cell | Error Correction Code with Hamming(7,4) encoding and triple modular redundancy |
| Electromigration at current density &gt;1×10⁶ A/cm² (Black's equation: MTF ∝ J⁻ⁿ exp(Eₐ/kT)) | 8 | Open circuit in aluminum interconnects (via voiding) | Copper damascene process with TaN diffusion barrier and current density limit of 5×10⁵ A/cm² |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | GB | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Memory Controller IC](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/memory-controller-ic.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Automated Test Handler**, **Burn-in Oven**, **ESD-Safe Workstation**  
**Downstream Applications**: Industrial Control Systems, Medical Diagnostic Equipment, Avionics Systems  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the primary function of the State Memory Module?
**A**: The State Memory Module records and retains operational state data within State Monitor systems, ensuring critical performance information is preserved even during power interruptions.

### Q: What materials are used in the State Memory Module construction?
**A**: The module is constructed using semiconductor silicon for memory cells, copper traces for electrical connectivity, and epoxy resin substrate for structural stability and thermal management.

### Q: How does the State Memory Module interface with monitoring systems?
**A**: The module features dedicated interface circuitry that allows seamless integration with State Monitor systems, enabling efficient data recording and retrieval through standardized communication protocols.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: State Memory Module](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/state-memory-module)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **3** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: STATE_MEMORY_MODULE | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 881017ab
