---
title: "Tamper Detection Circuit"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:TAMPER_DETECTION_CIRCUIT"
  data_integrity_hash: "ddf36259e2262b8c0dcdaabc9dc4a7ac"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:TAMPER_DETECTION_CIRCUIT"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuit.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuit"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "3.3-5.0 VDC, -40 to +85°C, 0-95% RH non-condensing"
    unit: "mm"
engineering_limits:
  max_safe_operating_point:
    value: 2.7
    unit: "VDC"
    consequence: "Dielectric breakdown in CMOS transistors at &gt;5.5 VDC (gate oxide thickness ~7 nm, breakdown field strength ~10 MV/cm), thermal runaway in semiconductor junctions above 125°C (silicon intrinsic carrier concentration doubles every 11°C), electrochemical migration at &gt;60% RH with contaminant ions present"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge (ESD) event exceeding 2 kV HBM (Human Body Model)"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated silicon-controlled rectifier (SCR) clamps with 1.5 kV protection, series resistance of 100 Ω on all I/O pins"
  - node_2:
      trigger: "Alpha particle radiation from package molding compound (flux &gt;0.001 α/cm²-hr)"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Triple modular redundancy (TMR) voting logic with spatial separation &gt;100 μm, boron-10 free molding compounds"
bom_nodes:
  environmental-sensor-array:
    type: "part"
    urn: "URN:CNFX:ME:ENVIRONMENTAL_SENSOR_ARRAY"
    interface_type: "physical-logic-coupled"
  voltage-monitor:
    type: "part"
    urn: "URN:CNFX:ME:VOLTAGE_MONITOR"
    interface_type: "physical-logic-coupled"
  seal-integrity-sensor:
    type: "part"
    urn: "URN:CNFX:ME:SEAL_INTEGRITY_SENSOR"
    interface_type: "physical-logic-coupled"
  response-trigger:
    type: "part"
    urn: "URN:CNFX:ME:RESPONSE_TRIGGER"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO/IEC 19790:2012 - SECURITY REQUIREMENTS FOR CRYPTOGRAPHIC MODULES"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuit.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "63c39fc91b3cf76fb9a5b3f213c05450f90819af6dc112ef2aa71f6eeab8a026"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Tamper Detection Circuit

## 1. Technical Definition
A security circuit designed to detect physical tampering or unauthorized access attempts to secure memory systems.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **3.3-5.0 VDC, -40 to +85°C, 0-95% RH non-condensing**. Failure boundary: **Voltage drop below 2.7 VDC or above 5.5 VDC for &gt;10 ms, temperature exceeding 125°C junction temperature, moisture ingress &gt;1000 ppm**, Mechanism: **Dielectric breakdown in CMOS transistors at &gt;5.5 VDC (gate oxide thickness ~7 nm, breakdown field strength ~10 MV/cm), thermal runaway in semiconductor junctions above 125°C (silicon intrinsic carrier concentration doubles every 11°C), electrochemical migration at &gt;60% RH with contaminant ions present**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge (ESD) event exceeding 2 kV HBM (Human Body Model) | 8 | Gate oxide rupture in input protection MOSFETs, creating permanent short circuit | Integrated silicon-controlled rectifier (SCR) clamps with 1.5 kV protection, series resistance of 100 Ω on all I/O pins |
| Alpha particle radiation from package molding compound (flux &gt;0.001 α/cm²-hr) | 8 | Single-event upset (SEU) in flip-flop memory cells, causing bit flips in tamper status registers | Triple modular redundancy (TMR) voting logic with spatial separation &gt;100 μm, boron-10 free molding compounds |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | mm | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Environmental Sensor Array](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/environmental-sensor-array.md) `(Standalone System)`
- [Voltage Monitor](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/voltage-monitor.md) `(Standalone System)`
- [Seal Integrity Sensor](https://cnfx.com/llms/industry/machinery-and-equipment-manufacturing/product/seal-integrity-sensor.md) `(Standalone System)`
- [Response Trigger](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/response-trigger.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Automated Optical Inspection System**, **Surface Mount Technology Line**, **Environmental Test Chamber**  
**Downstream Applications**: Secure Hardware Security Modules, Tamper-Resistant Smart Cards, Protected Industrial Control Systems  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: How does the tamper detection circuit protect secure memory systems?
**A**: The circuit continuously monitors environmental conditions, voltage levels, and seal integrity using specialized sensors. When tampering is detected, it triggers immediate protective responses to prevent data compromise.

### Q: What types of tampering can this circuit detect?
**A**: It detects physical intrusion attempts, environmental manipulation (temperature/pressure changes), voltage anomalies, and seal breaches. The multi-sensor approach provides comprehensive protection against various attack vectors.

### Q: Can this tamper detection circuit be integrated into existing electronic systems?
**A**: Yes, the circuit is designed with standard semiconductor materials (silicon, copper) and can be customized for integration into various computer, electronic, and optical manufacturing applications with proper encapsulation.

## 6. Manufacturing Compliance
- ISO/IEC 19790:2012 - SECURITY REQUIREMENTS FOR CRYPTOGRAPHIC MODULES

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Tamper Detection Circuit](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuit)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: TAMPER_DETECTION_CIRCUIT | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 22df9031
