---
title: "Tamper Detection Circuitry"
industry: "Computer, Electronic and Optical Product Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:TAMPER_DETECTION_CIRCUITRY"
  data_integrity_hash: "5415e3329e3b2c668d93ad6aa00269df"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:TAMPER_DETECTION_CIRCUITRY"
  data_source_uri: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuitry.md"
  official_resource_url: "https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuitry"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "3.0-3.6 VDC at 25°C ambient, derating to 2.7-3.3 VDC at 85°C"
    unit: "mm²"
engineering_limits:
  max_safe_operating_point:
    value: 2.4
    unit: "VDC"
    consequence: "CMOS transistor threshold voltage violation causing logic state corruption (Vth ≈ 0.7 V for 65 nm process)"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Electrostatic discharge (ESD) event exceeding 2 kV HBM"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated ESD clamp with 1.5 ns response time and 5 Ω series resistance"
  - node_2:
      trigger: "Mechanical stress exceeding 150 MPa on silicon die"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Stress-relief underfill with CTE of 12 ppm/°C matching silicon (2.6 ppm/°C)"
bom_nodes:
  environmental-sensors:
    type: "part"
    urn: "URN:CNFX:ME:ENVIRONMENTAL_SENSORS"
    interface_type: "physical-logic-coupled"
  reference-circuit:
    type: "component"
    urn: "URN:CNFX:ME:REFERENCE_CIRCUIT"
    interface_type: "physical-logic-coupled"
  detection-logic:
    type: "part"
    urn: "URN:CNFX:ME:DETECTION_LOGIC"
    interface_type: "physical-logic-coupled"
  tamper-response-circuit:
    type: "part"
    urn: "URN:CNFX:ME:TAMPER_RESPONSE_CIRCUIT"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO/IEC 19790:2015 - SECURITY REQUIREMENTS FOR CRYPTOGRAPHIC MODULES"
    scope: "Verified Engineering Specification"
  - standard: "ANSI/UL 294:2019 - ACCESS CONTROL SYSTEM UNITS"
    scope: "Verified Engineering Specification"
  - standard: "DIN EN 50131-1:2006 - ALARM SYSTEMS - INTRUSION AND HOLD-UP SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuitry.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "b61d5c9e0c6e7da61d3f804015176af675a5b5a22a492062da1d5d30276b17c2"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Tamper Detection Circuitry

## 1. Technical Definition
Electronic circuit designed to detect physical tampering or unauthorized access attempts on a security chip.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **3.0-3.6 VDC at 25°C ambient, derating to 2.7-3.3 VDC at 85°C**. Failure boundary: **Supply voltage below 2.4 VDC or above 3.8 VDC for &gt;10 ms**, Mechanism: **CMOS transistor threshold voltage violation causing logic state corruption (Vth ≈ 0.7 V for 65 nm process)**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Electrostatic discharge (ESD) event exceeding 2 kV HBM | 8 | Gate oxide breakdown in input protection diodes (tox ≈ 2 nm) | Integrated ESD clamp with 1.5 ns response time and 5 Ω series resistance |
| Mechanical stress exceeding 150 MPa on silicon die | 8 | Microcrack propagation through polysilicon resistor layer (σy ≈ 200 MPa) | Stress-relief underfill with CTE of 12 ppm/°C matching silicon (2.6 ppm/°C) |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | mm² | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Environmental Sensors](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/environmental-sensors.md) `(Standalone System)`
- [Detection Logic](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/detection-logic.md) `(Standalone System)`
- [Tamper Response Circuit](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-response-circuit.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Pick-and-Place Machine**, **Reflow Soldering Oven**, **Automated Optical Inspection System**  
**Downstream Applications**: Secure Payment Terminals, Hardware Security Modules, Smart Card Chips  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: How does tamper detection circuitry protect security chips?
**A**: The circuitry continuously monitors environmental sensors and reference circuits to detect physical tampering attempts like drilling, probing, or voltage manipulation, triggering immediate response mechanisms to protect sensitive data.

### Q: What materials are used in tamper detection circuitry manufacturing?
**A**: Primary materials include silicon semiconductor substrates for the chip base, copper for interconnects, and dielectric materials for insulation between circuit layers, ensuring reliable operation in security applications.

### Q: What components are included in the BOM for tamper detection circuitry?
**A**: The bill of materials includes environmental sensors to detect physical changes, reference circuits for baseline comparison, detection logic to analyze signals, and tamper response circuits to execute protective actions when threats are identified.

## 6. Manufacturing Compliance
- ISO/IEC 19790:2015 - SECURITY REQUIREMENTS FOR CRYPTOGRAPHIC MODULES
- ANSI/UL 294:2019 - ACCESS CONTROL SYSTEM UNITS
- DIN EN 50131-1:2006 - ALARM SYSTEMS - INTRUSION AND HOLD-UP SYSTEMS

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Tamper Detection Circuitry](https://cnfx.com/industry/computer-electronic-and-optical-product-manufacturing/product/tamper-detection-circuitry)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: TAMPER_DETECTION_CIRCUITRY | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 7e9670e9
