---
title: "IGBT Module"
industry: "Electrical Equipment Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:IGBT_MODULE"
  data_integrity_hash: "a57ec5e49e61af7e50709786071fd019"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:IGBT_MODULE"
  data_source_uri: "https://cnfx.com/llms/industry/electrical-equipment-manufacturing/product/igbt-module.md"
  official_resource_url: "https://cnfx.com/industry/electrical-equipment-manufacturing/product/igbt-module"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "600-6500V collector-emitter voltage, 10-3600A collector current, -40°C to +150°C junction temperature"
    unit: "A"
engineering_limits:
  max_safe_operating_point:
    value: 175
    unit: "°C"
    consequence: "Thermal runaway due to positive temperature coefficient of collector current, latch-up from parasitic thyristor activation, dielectric breakdown at 6500V"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Gate oxide degradation from repetitive voltage transients exceeding 20V"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated gate resistor network with 10Ω resistance, snubber circuit with 0.1μF capacitance"
  - node_2:
      trigger: "Thermal cycling stress from 40°C to 150°C junction temperature swings"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Direct copper bonding substrate with 3.2W/m·K thermal conductivity, 0.3mm thick solder layer"
bom_nodes:
  igbt-chip:
    type: "component"
    urn: "URN:CNFX:ME:IGBT_CHIP"
    interface_type: "physical-logic-coupled"
  diode-chip:
    type: "component"
    urn: "URN:CNFX:ME:DIODE_CHIP"
    interface_type: "physical-logic-coupled"
  ceramic-substrate:
    type: "component"
    urn: "URN:CNFX:ME:CERAMIC_SUBSTRATE"
    interface_type: "physical-logic-coupled"
  baseplate:
    type: "component"
    urn: "URN:CNFX:ME:BASEPLATE"
    interface_type: "physical-logic-coupled"
  gate-driver-circuit:
    type: "part"
    urn: "URN:CNFX:ME:GATE_DRIVER_CIRCUIT"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
url: "https://cnfx.com/llms/industry/electrical-equipment-manufacturing/product/igbt-module.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "6f277584df1004eec26271068e9769cf27a5bc375f88629edcbd60d23190ade2"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: IGBT Module

## 1. Technical Definition
A power semiconductor device used for high-power switching in plasma power supplies

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **600-6500V collector-emitter voltage, 10-3600A collector current, -40°C to +150°C junction temperature**. Failure boundary: **Junction temperature exceeds 175°C, collector-emitter voltage surpasses 6500V, gate-emitter voltage exceeds ±20V**, Mechanism: **Thermal runaway due to positive temperature coefficient of collector current, latch-up from parasitic thyristor activation, dielectric breakdown at 6500V**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Gate oxide degradation from repetitive voltage transients exceeding 20V | 8 | Gate-emitter short circuit causing uncontrolled conduction | Integrated gate resistor network with 10Ω resistance, snubber circuit with 0.1μF capacitance |
| Thermal cycling stress from 40°C to 150°C junction temperature swings | 8 | Wire bond lift-off due to coefficient of thermal expansion mismatch (silicon: 2.6×10⁻⁶/°C, aluminum: 23×10⁻⁶/°C) | Direct copper bonding substrate with 3.2W/m·K thermal conductivity, 0.3mm thick solder layer |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | A | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Gate Driver Circuit](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/gate-driver-circuit.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Thermal Management System**, **DC Link Capacitor Bank**  
**Downstream Applications**: Plasma Power Supply Units, Industrial Motor Drives, Renewable Energy Inverters  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What is the primary application of this IGBT module?
**A**: This IGBT module is specifically designed for high-power switching applications in plasma power supplies within the electrical equipment manufacturing industry.

### Q: What materials are used in the construction of this IGBT module?
**A**: The module is constructed using silicon semiconductor chips, copper terminals for electrical connections, a ceramic substrate for insulation and heat dissipation, and an aluminum baseplate for thermal management.

### Q: What components are included in the BOM for this IGBT module?
**A**: The bill of materials includes IGBT chips, diode chips, ceramic substrate, baseplate, and gate driver circuit components for complete power switching functionality.

## 6. Manufacturing Compliance

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: IGBT Module](https://cnfx.com/industry/electrical-equipment-manufacturing/product/igbt-module)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **5** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: IGBT_MODULE | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 9e800460
