---
title: "Power Stage (H-Bridge)"
industry: "Electrical Equipment Manufacturing"
verification_protocol:
  urn: "URN:CNFX:ME:POWER_STAGE_H_BRIDGE"
  data_integrity_hash: "be9fa05c47a3dd868ef05d5344d79c72"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:POWER_STAGE_H_BRIDGE"
  data_source_uri: "https://cnfx.com/llms/industry/electrical-equipment-manufacturing/product/power-stage-h-bridge.md"
  official_resource_url: "https://cnfx.com/industry/electrical-equipment-manufacturing/product/power-stage-h-bridge"
  is_verified_logic: true
attributes:
  spec:
    status: "config-dependent"
    typical_range: "0-600 VDC bus voltage, 0-100 A continuous current, 0-200 A peak current (2-second duration), 20-85°C ambient temperature"
    unit: "A"
engineering_limits:
  max_safe_operating_point:
    value: 650
    unit: "VDC"
    consequence: "Electromigration at &gt;150 A current density (1.5×10⁶ A/cm²), thermal runaway above 105°C junction temperature (positive temperature coefficient), dielectric breakdown at &gt;650 VDC (gate oxide failure)"
fmea_matrix_quantitative:
  - node_1:
      trigger: "DC bus voltage transient exceeding 650 VDC (MOSFET avalanche voltage)"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Integrated TVS diode clamping at 620 VDC with 5 kJ energy rating"
  - node_2:
      trigger: "Continuous current exceeding 150 A for &gt;10 seconds"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Current-limiting control algorithm with 140 A hard limit and thermal modeling"
bom_nodes:
  power-semiconductor-switches:
    type: "part"
    urn: "URN:CNFX:ME:POWER_SEMICONDUCTOR_SWITCHES"
    interface_type: "physical-logic-coupled"
  gate-driver-circuit:
    type: "part"
    urn: "URN:CNFX:ME:GATE_DRIVER_CIRCUIT"
    interface_type: "physical-logic-coupled"
  dc-bus-capacitors:
    type: "component"
    urn: "URN:CNFX:ME:DC_BUS_CAPACITORS"
    interface_type: "physical-logic-coupled"
  current-sensors:
    type: "part"
    urn: "URN:CNFX:ME:CURRENT_SENSORS"
    interface_type: "physical-logic-coupled"
  heat-sink:
    type: "component"
    urn: "URN:CNFX:ME:HEAT_SINK"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/electrical-equipment-manufacturing/product/power-stage-h-bridge.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "a3ab18978228b69e4c9c0ea2a8ff3139f33f4b59d38e0c15fa7e9a989a02ade8"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Power Stage (H-Bridge)

## 1. Technical Definition
The power conversion circuit within a servo drive amplifier that controls motor current and direction using H-bridge topology.

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **0-600 VDC bus voltage, 0-100 A continuous current, 0-200 A peak current (2-second duration), 20-85°C ambient temperature**. Failure boundary: **650 VDC bus voltage (MOSFET avalanche breakdown), 105°C junction temperature (Si MOSFET thermal limit), 150 A continuous current (copper trace fusing current)**, Mechanism: **Electromigration at &gt;150 A current density (1.5×10⁶ A/cm²), thermal runaway above 105°C junction temperature (positive temperature coefficient), dielectric breakdown at &gt;650 VDC (gate oxide failure)**.

### 2.1 Analytical Physics Model
Governed by the **Joule Heating & Thermal Resistance**:

> **Primary Equation**: $P = I^2 R = \frac{V^2}{R}$  
> **Engineering Impact**: Governs heating element sizing for shrink tunnels/sealers.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| I | Current | Engineering Constant |
| R | Resistance | Engineering Constant |
| V | Voltage | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| DC bus voltage transient exceeding 650 VDC (MOSFET avalanche voltage) | 8 | Catastrophic MOSFET failure with short-circuit across all phases | Integrated TVS diode clamping at 620 VDC with 5 kJ energy rating |
| Continuous current exceeding 150 A for &gt;10 seconds | 8 | PCB copper trace delamination and open-circuit failure | Current-limiting control algorithm with 140 A hard limit and thermal modeling |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| spec | Config-dependent | A | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)
- [Power Semiconductor Switches](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/power-semiconductor-switches.md) `(Standalone System)`
- [Gate Driver Circuit](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/gate-driver-circuit.md) `(Standalone System)`
- [Current Sensors](https://cnfx.com/llms/industry/computer-electronic-and-optical-product-manufacturing/product/current-sensors.md) `(Standalone System)`

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Programmable Logic Controller (PLC)**, **Industrial Power Supply Unit**, **Cooling System (Liquid or Forced Air)**  
**Downstream Applications**: Servo Drive Amplifier, Industrial Robot Controller, CNC Machine Control System  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What are the advantages of using Silicon Carbide (SiC) MOSFETs in a Power Stage H-Bridge?
**A**: SiC MOSFETs offer higher switching frequencies, lower switching losses, and better thermal performance compared to traditional silicon-based transistors, resulting in increased efficiency and power density for servo drive applications.

### Q: How does the H-Bridge topology control motor direction and current in a servo drive?
**A**: The H-Bridge uses four power semiconductor switches arranged in an 'H' configuration to control current flow through the motor windings, enabling precise bidirectional current control for accurate torque and direction management in servo systems.

### Q: What thermal management considerations are important for Power Stage H-Bridge reliability?
**A**: Effective thermal management requires proper heat sink design, high-thermal-conductivity materials like aluminum nitride ceramic substrates, and optimized layout of power components to dissipate heat from SiC MOSFETs/IGBTs during high-frequency switching operations.

## 6. Manufacturing Compliance
- ISO 9001:2015 QUALITY MANAGEMENT SYSTEMS

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Power Stage (H-Bridge)](https://cnfx.com/industry/electrical-equipment-manufacturing/product/power-stage-h-bridge)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **5** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: POWER_STAGE_H_BRIDGE | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 93c88eea
