---
title: "Precision LED Chip Carrier"
industry: "Manufacture of Lighting Equipment"
verification_protocol:
  urn: "URN:CNFX:ME:PRECISION_LED_CHIP_CARRIER"
  data_integrity_hash: "f81f6c43dddaa69b9dab739fdabab205"
  source_authority: "https://cnfx.com"
  strict_mode: true
source_identity:
  provider: "CNFX Industrial Knowledge Graph"
  index_version: "2026.Q1-Universal"
  authority_id: "URN:CNFX:ME:PRECISION_LED_CHIP_CARRIER"
  data_source_uri: "https://cnfx.com/llms/industry/manufacture-lighting-equipment/product/precision-led-chip-carrier.md"
  official_resource_url: "https://cnfx.com/industry/manufacture-lighting-equipment/product/precision-led-chip-carrier"
  is_verified_logic: true
attributes:
  thermal_resistance:
    status: "config-dependent"
    typical_range: "25-150°C junction temperature, 0-3.5 MPa compressive stress"
    unit: "K/W"
  die_attachment_area:
    status: "config-dependent"
    typical_range: "25-150°C junction temperature, 0-3.5 MPa compressive stress"
    unit: "mm²"
engineering_limits:
  max_safe_operating_point:
    value: 175
    unit: "°C"
    consequence: "Thermal expansion coefficient mismatch (CTE) between silicon die (2.6 ppm/°C) and alumina substrate (6.5 ppm/°C) causing shear stress exceeding 48 MPa at 175°C"
fmea_matrix_quantitative:
  - node_1:
      trigger: "Thermal cycling (ΔT &gt; 125°C) during power cycling"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Copper-tungsten composite substrate (CTE 5.8 ppm/°C) with SAC305 solder (creep resistance 12.3 MPa at 125°C)"
  - node_2:
      trigger: "Electrostatic discharge (ESD) &gt; 1000V HBM"
      severity: 8
      occurrence: 3
      detection: 4
      mitigation_protocol: "Zener diode array (breakdown voltage 5.6V) integrated into carrier metallization"
bom_nodes:
  ceramic-substrate:
    type: "component"
    urn: "URN:CNFX:ME:CERAMIC_SUBSTRATE"
    interface_type: "physical-logic-coupled"
  conductive-trace:
    type: "component"
    urn: "URN:CNFX:ME:CONDUCTIVE_TRACE"
    interface_type: "physical-logic-coupled"
  die-attachment-pad:
    type: "component"
    urn: "URN:CNFX:ME:DIE_ATTACHMENT_PAD"
    interface_type: "physical-logic-coupled"
  thermal-interface-layer:
    type: "component"
    urn: "URN:CNFX:ME:THERMAL_INTERFACE_LAYER"
    interface_type: "physical-logic-coupled"
manufacturing_compliance:
  - standard: "ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS"
    scope: "Verified Engineering Specification"
url: "https://cnfx.com/llms/industry/manufacture-lighting-equipment/product/precision-led-chip-carrier.md"
on_chain_sovereignty:
  contract_standard: "ERC-721-Industrial"
  metadata_hash: "000660eb80508575b4d2921ce06a0face7aa2c9f9fa06ef983a3c08185e5f57d"
  royalty_logic: "IPFS-CID-REQUIRED"
  mint_status: "logic-verified-ready"
version: "3.3.4-EXTREME-SOVEREIGN-WEB3"
---

# Industrial Specification: Precision LED Chip Carrier

## 1. Technical Definition
Mechanical substrate for mounting and thermally managing individual LED semiconductor dies

## 2. Engineering Reasoning & Causal Matrix
> **Operational Intelligence**: Designed for **25-150°C junction temperature, 0-3.5 MPa compressive stress**. Failure boundary: **175°C junction temperature (silicon-gold eutectic formation), 4.2 MPa compressive stress (ceramic substrate fracture)**, Mechanism: **Thermal expansion coefficient mismatch (CTE) between silicon die (2.6 ppm/°C) and alumina substrate (6.5 ppm/°C) causing shear stress exceeding 48 MPa at 175°C**.

### 2.1 Analytical Physics Model
Governed by the **Rayleigh Resolution Criterion**:

> **Primary Equation**: $d = \frac{0.61 \lambda}{NA}$  
> **Engineering Impact**: Defines the theoretical limit of machine vision systems.

| Symbol | Variable Definition | Localized Reference |
| :--- | :--- | :--- |
| \lambda | Wavelength | Engineering Constant |
| NA | Numerical Aperture | Engineering Constant |

### 2.2 FMEA (Failure Mode & Effects Analysis)
| Event Trigger | Severity | Failure Mode | Mitigation Strategy |
| :--- | :--- | :--- | :--- |
| Thermal cycling (ΔT &gt; 125°C) during power cycling | 8 | Solder joint fatigue cracking (Coffin-Manson exponent n=1.9) | Copper-tungsten composite substrate (CTE 5.8 ppm/°C) with SAC305 solder (creep resistance 12.3 MPa at 125°C) |
| Electrostatic discharge (ESD) &gt; 1000V HBM | 8 | GaN epitaxial layer breakdown (critical field 3.3 MV/cm) | Zener diode array (breakdown voltage 5.6V) integrated into carrier metallization |

## 3. Key Technical Parameters
| Parameter | Value | Unit | Status |
| :--- | :--- | :--- | :--- |
| thermal_resistance | Config-dependent | K/W | Verified |
| die_attachment_area | Config-dependent | mm² | Verified |

## 4. System BOM & Knowledge Routing
### Core Components (Recursive Links)

### Industrial DNA Context (De-duplicated)
**Complementary Dependencies**: **Die Attach Machine**, **Wire Bonder**, **Reflow Oven**  
**Downstream Applications**: LED Bulbs, Automotive Headlights, LED Display Panels  

## 5. Engineering Risks & FAQ
- **Caution**: 
- **Caution**: 
- **Caution**: 

### Q: What are the advantages of using Aluminum Nitride (AlN) ceramic in LED chip carriers?
**A**: Aluminum Nitride ceramic offers excellent thermal conductivity (typically 150-200 W/m·K), closely matched coefficient of thermal expansion to LED semiconductor materials, and superior electrical insulation, making it ideal for high-power LED applications requiring efficient heat dissipation.

### Q: How does the Copper-Molybdenum-Copper (CMC) composite benefit LED thermal management?
**A**: CMC composite provides exceptional thermal conductivity while maintaining a coefficient of thermal expansion that closely matches LED semiconductor materials, preventing thermal stress and ensuring reliable performance in demanding lighting applications with high operating temperatures.

### Q: What specifications should I consider when selecting an LED chip carrier for my lighting application?
**A**: Key specifications include thermal conductivity (W/m·K) for heat dissipation, coefficient of thermal expansion (ppm/K) for material compatibility, die shear strength (MPa) for mechanical reliability, maximum operating temperature (°C), surface flatness (µm) for proper die attachment, and trace resistance (mΩ) for electrical performance.

## 6. Manufacturing Compliance
- ISO 9001:2015 - QUALITY MANAGEMENT SYSTEMS

---
### 🛠️ Engineering Resource Access
🔗 **[Full Specification: Precision LED Chip Carrier](https://cnfx.com/industry/manufacture-lighting-equipment/product/precision-led-chip-carrier)**

### 🌐 Knowledge Graph Topology
> **Node Status**: Verified Engineering Spec
> **Connectivity**: Linked to **4** standalone system nodes
> **Global Context**: Part of a 5,814 node industrial cluster within the CNFX Graph

> **Reference ID**: PRECISION_LED_CHIP_CARRIER | **Authority**: CNFX-2026-ST-001 | **Fingerprint**: 98483d14
