Hall Element: Magnetic Range ±50 mT to ±1 T

Q: What is the difference between a Hall element and a Hall effect sensor?

A Hall element is the raw semiconductor chip that generates the Hall voltage. A Hall effect sensor integrates the Hall element with signal conditioning circuitry (amplifiers, regulators, comparators) to provide a usable output signal.

Q: Why are different semiconductor materials used for Hall elements?

Gallium arsenide offers excellent temperature stability, indium compounds provide higher sensitivity, and silicon allows integration with CMOS electronics for smart sensors. Material choice balances sensitivity, temperature range, and cost.

Q: How do you calibrate a Hall element?

Calibration involves applying known magnetic fields at specified temperatures and characterizing the output voltage. Offset nulling and sensitivity trimming are performed during sensor manufacturing using laser trimming or digital compensation algorithms.

Component Specifications

Definition

A Hall element is a thin, flat semiconductor chip (typically made from gallium arsenide, indium arsenide, or silicon) that operates on the Hall effect principle. When placed perpendicular to a magnetic field and supplied with a constant current, it generates a voltage proportional to the magnetic flux density. This output voltage is extremely small (microvolts to millivolts) and requires signal conditioning through integrated amplifiers in Hall effect sensors. The component's sensitivity, offset voltage, temperature stability, and linearity are critical parameters determined by its material properties and geometric design.

Working Principle

The Hall effect: When a current-carrying conductor (or semiconductor) is placed in a magnetic field perpendicular to the current flow, a voltage difference (Hall voltage) develops across the conductor transverse to both the current and the magnetic field. This voltage is proportional to the product of the current, magnetic flux density, and material-specific Hall coefficient.

Materials

Semiconductor materials: Gallium arsenide (GaAs) for high-temperature stability, indium arsenide (InAs) for high sensitivity, indium antimonide (InSb) for very high sensitivity, silicon (Si) for integrated CMOS compatibility. Substrate: Typically alumina or silicon. Contacts: Gold or aluminum bonding wires. Packaging: Epoxy encapsulation in plastic or ceramic packages for protection.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Sensitivity	5-100 mV/mT
Response Time	<10 μs
Magnetic Range	±50 mT to ±1 T
Supply Current	1-20 mA
Linearity Error	<1% FS
Output Voltage Range	0.1-5 V
Operating Temperature	-40°C to +150°C

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 11452-8, IEC 60747-5, DIN EN 50178

Parent Products

This component is used in the following industrial products

Hall Effect Sensor

A transducer that varies its output voltage in response to a magnetic field, based on the Hall effect.

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Engineering Analysis

Risks & Mitigation

Magnetic interference from nearby components
Temperature-induced sensitivity drift
Electrostatic discharge (ESD) damage during handling
Mechanical stress affecting semiconductor properties

FMEA Triads

Trigger: Contamination during semiconductor fabrication
Failure: Increased noise, reduced sensitivity, or complete non-function
Mitigation: Cleanroom manufacturing, hermetic packaging, rigorous electrical testing

Trigger: Thermal expansion mismatch between semiconductor and package
Failure: Mechanical stress causing parameter drift or cracking
Mitigation: CTE-matched materials, stress-relief designs, temperature cycling tests

Trigger: Electromagnetic interference from power lines
Failure: False triggering or inaccurate measurements
Mitigation: Shielding, differential signal processing, proper grounding

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

Magnetic sensitivity tolerance typically ±5% to ±10% at 25°C, temperature coefficient of sensitivity <0.1%/°C for precision applications

Test Method

Magnetic characterization using Helmholtz coils or permanent magnet fixtures, temperature testing in environmental chambers, electrical testing per IEC 60747-5 for semiconductor Hall devices

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Hall Element

1 company lists this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.

SHENZHEN SIVAGO SEMICONDUCTOR CO.,LTD

深圳, Hong Kong, CN

Also makes: Photo-eye Sensors, Optical Sensor

Listed on the company's own website · profile compiled by CNFX from public sources

Listed there as: “霍尔元件 Hall Element”
View source page ↗ sivago.com.cn · checked 2026-09-12

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Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.

Compiled and source-reviewed by the CNFX editorial team. Each manufacturer above links to the page on that company's own website where the product is listed, with the date we checked it. How we source and review

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Frequently Asked Questions

What is the difference between a Hall element and a Hall effect sensor?