High-Side & Low-Side MOSFETs: Voltage Rating 20V to 100V

Component Specifications

Definition

High-side and low-side MOSFETs are paired metal-oxide-semiconductor field-effect transistors used in synchronous buck converters within Voltage Regulator Modules (VRMs). The high-side MOSFET (control FET) switches input voltage to the inductor, while the low-side MOSFET (sync FET) provides a path for inductor current during off-cycles, enabling efficient DC-DC voltage conversion with minimal power loss.

Working Principle

In a VRM's synchronous buck converter, the high-side MOSFET turns on to apply input voltage to the inductor, storing energy. When it turns off, the low-side MOSFET conducts, allowing inductor current to freewheel, maintaining output voltage. They operate in complementary PWM cycles, with dead-time control to prevent shoot-through currents.

Materials

Silicon (Si) or wide-bandgap materials like Silicon Carbide (SiC) or Gallium Nitride (GaN) for high-frequency applications; copper or aluminum bond wires; epoxy molding compound packaging.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Package	PowerPAK, SO-8, D2PAK, QFN
Rds(on)	1mΩ to 10mΩ
Current Rating	30A to 100A
Voltage Rating	20V to 100V
Gate Charge (Qg)	10nC to 100nC
Switching Frequency	100kHz to 2MHz

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 9001, JEDEC JESD22, AEC-Q101

Parent Products

This component is used in the following industrial products

VRM (Voltage Regulator Module)

A power regulation component that converts and stabilizes input voltage to precise levels required by GPU cores and memory.

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Engineering Analysis

Risks & Mitigation

Thermal runaway due to poor heatsinking
Gate oxide breakdown from voltage spikes
Shoot-through current if dead-time is insufficient
Electromigration at high temperatures

FMEA Triads

Trigger: Excessive junction temperature
Failure: MOSFET thermal shutdown or permanent damage
Mitigation: Implement thermal monitoring, use adequate heatsinks, and ensure proper airflow in the system.

Trigger: Voltage transients from inductive loads
Failure: Gate-source overvoltage leading to breakdown
Mitigation: Add snubber circuits, use MOSFETs with higher Vgs ratings, and incorporate TVS diodes.

Trigger: Insufficient dead-time in PWM control
Failure: Shoot-through current causing high power dissipation
Mitigation: Optimize dead-time in the controller IC, use gate drivers with adjustable timing.

Industrial Ecosystem

Compatible With

VRM circuits in motherboards, GPUs, servers, and power supplies

Typical Suppliers & Equivalents

Infineon, ON Semiconductor, STMicroelectronics, Texas Instruments, Vishay

Compliance & Inspection

Tolerance

±5% for voltage regulation, ±10% for current handling under specified conditions

Test Method

Dynamic load testing, thermal cycling per JESD22-A104, electrical characterization with curve tracers and oscilloscopes

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of High-Side & Low-Side MOSFETs

Manufacturer profiles associated with High-Side & Low-Side MOSFETs.

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Compiled and source-reviewed by the CNFX editorial team. Each manufacturer above links to the page on that company's own website where the product is listed, with the date we checked it. How we source and review

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Frequently Asked Questions

What is the difference between high-side and low-side MOSFETs in a VRM?

The high-side MOSFET switches the input voltage to the inductor, while the low-side MOSFET provides a current path during the off-cycle, reducing conduction losses and improving efficiency.

Why are MOSFETs used in pairs in VRMs?

Paired MOSFETs enable synchronous rectification, where the low-side MOSFET replaces a diode, lowering voltage drop and power loss, especially at high currents.

What are key parameters when selecting these MOSFETs?

Critical specs include Rds(on) for conduction loss, gate charge for switching speed, voltage/current ratings, and thermal resistance for heat dissipation.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification

This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

High-Side & Low-Side MOSFETs