Bulk GaAs Crystal: Diameter 50-200 mm, Length 150-500 mm

Q: What is the difference between bulk GaAs crystal and GaAs wafer?

Bulk GaAs crystal refers to the large single-crystal ingot grown through crystallization processes, while GaAs wafers are thin slices cut from this bulk crystal that have been polished and processed for device fabrication.

Q: Why is GaAs preferred over silicon for certain applications?

GaAs offers higher electron mobility, direct bandgap for efficient light emission, and better performance at high frequencies and temperatures, making it ideal for RF devices, optoelectronics, and high-speed applications.

Q: What are the main challenges in growing bulk GaAs crystals?

Main challenges include controlling stoichiometry (gallium to arsenic ratio), minimizing defect formation (dislocations, twins), maintaining high purity, and achieving uniform doping distribution throughout the crystal.

Component Specifications

Definition

Bulk GaAs crystal refers to a large, single-crystal ingot of gallium arsenide (GaAs) grown through controlled crystallization processes such as Liquid Encapsulated Czochralski (LEC) or Vertical Gradient Freeze (VGF) methods. This crystalline material serves as the starting material for producing high-purity GaAs wafer substrates, which are essential for manufacturing semiconductor devices including integrated circuits, LEDs, laser diodes, and photovoltaic cells. The crystal structure must maintain exceptional purity (typically 99.9999% or higher) and minimal defect density to ensure optimal electronic properties.

Working Principle

Bulk GaAs crystals are grown through controlled solidification from a molten mixture of gallium and arsenic under precisely maintained temperature and pressure conditions. The process involves seeding a small GaAs crystal into the melt, then slowly withdrawing it while maintaining thermal gradients that promote single-crystal growth. This results in a cylindrical ingot with a consistent crystalline orientation (typically <100> or <111>), which is then sliced, polished, and etched to create wafer substrates.

Materials

Gallium Arsenide (GaAs) with dopants including silicon (Si), tellurium (Te), or chromium (Cr) for n-type or p-type conductivity. Purity requirements: 6N (99.9999%) or higher for electronic grade, with controlled concentrations of impurities such as carbon, oxygen, and transition metals below 1 part per billion.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Length	150-500 mm
Diameter	50-200 mm
Mobility	200-8500 cm^2/V·s
Resistivity	10^6-10^9 ohm-cm (semi-insulating)
Crystal Orientation	<100>, <111>
Dislocation Density	<1000 cm^-2
Carrier Concentration	10^14-10^18 cm^-3

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 14644-1, ISO 9001, SEMI M1, SEMI M59, DIN 50441

Parent Products

This component is used in the following industrial products

High-Purity Gallium Arsenide Wafer Substrate

High-purity gallium arsenide (GaAs) wafer substrates are essential raw materials in the manufacture of advanced communication equipment.

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Engineering Analysis

Risks & Mitigation

Arsenic toxicity during handling
Thermal stress cracking during growth
Crystalline defect propagation
Contamination from crucible materials
Non-uniform doping distribution

FMEA Triads

Trigger: Improper temperature gradient during crystal growth
Failure: Polycrystalline formation or high dislocation density
Mitigation: Implement precise thermal profiling and real-time monitoring systems with automated feedback control

Trigger: Contamination from growth chamber or crucible
Failure: Reduced carrier mobility and increased leakage current
Mitigation: Use high-purity quartz or pyrolytic boron nitride crucibles with controlled atmosphere and regular chamber maintenance

Trigger: Inconsistent pulling/rotation rates
Failure: Diameter variations and stress-induced defects
Mitigation: Implement servo-controlled pulling mechanisms with vibration damping and real-time diameter measurement

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

Diameter tolerance: ±0.5 mm, Orientation accuracy: ±0.5°, Thickness variation: <5 μm across wafer

Test Method

X-ray diffraction for crystal orientation, Hall effect measurement for electrical properties, photoluminescence spectroscopy for purity assessment, etch pit density measurement for dislocation counting

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

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CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Bulk GaAs Crystal

Manufacturer profiles associated with Bulk GaAs Crystal.

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Frequently Asked Questions

What is the difference between bulk GaAs crystal and GaAs wafer?