INDUSTRY COMPONENT

LED/Infrared Emitter

LED/Infrared Emitter is an optoelectronic semiconductor device that emits light or infrared radiation when electrically activated, used for signal transmission, sensing, and isolation in industrial applications.

Component Specifications

Definition
The LED/Infrared Emitter is a critical optoelectronic component within opto-isolators, converting electrical signals into optical signals (visible light or infrared) to enable galvanic isolation between circuits. It consists of a semiconductor chip (typically gallium arsenide, gallium aluminum arsenide, or similar materials) mounted in a reflective cavity with encapsulation. When forward-biased, electrons and holes recombine in the semiconductor, emitting photons at specific wavelengths (e.g., 850-950 nm for infrared). This component ensures noise immunity, high-voltage isolation, and reliable signal transmission in industrial environments, with applications ranging from motor controls to communication interfaces.
Working Principle
The LED/Infrared Emitter operates on electroluminescence. When a forward voltage is applied across the p-n junction, electrons from the n-region recombine with holes from the p-region, releasing energy as photons. The wavelength depends on the semiconductor bandgap (e.g., infrared emitters use materials like GaAs). In opto-isolators, this optical output couples to a photodetector (e.g., phototransistor), transmitting signals without electrical connection, providing isolation up to several kilovolts.
Materials
Semiconductor: Gallium Arsenide (GaAs), Gallium Aluminum Arsenide (GaAlAs), or similar III-V compounds for infrared; Gallium Phosphide (GaP) or Gallium Nitride (GaN) for visible LEDs. Substrate: Silicon or sapphire. Encapsulation: Epoxy resin or silicone with phosphor coatings (for visible LEDs). Leads: Copper alloy with tin or gold plating. Reflector: Aluminum or silver-coated ceramic.
Technical Parameters
  • Wavelength 850-950 nm (Infrared), 400-700 nm (Visible)
  • Package Type Through-hole (e.g., 3 mm, 5 mm) or SMD (e.g., 0805, 1206)
  • Viewing Angle 15-60 degrees
  • Rise/Fall Time 10-100 ns
  • Forward Current 10-100 mA
  • Forward Voltage 1.2-2.2 V
  • Isolation Voltage Up to 5 kV
  • Optical Power Output 1-10 mW
  • Operating Temperature -40°C to +85°C
Standards
ISO 9001, ISO 14001, IEC 60747-5-2, JEDEC JESD22

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for LED/Infrared Emitter.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Thermal degradation from overcurrent
  • Wavelength shift due to aging
  • Delamination of encapsulation under humidity
  • Reduced optical output from contamination
  • Electrical overstress from voltage spikes
FMEA Triads
Trigger: Excessive forward current or voltage
Failure: Catastrophic burnout or reduced optical power
Mitigation: Implement current-limiting resistors, use surge protection circuits, and adhere to datasheet specifications for maximum ratings.
Trigger: High ambient temperature or poor heat dissipation
Failure: Accelerated aging and wavelength drift
Mitigation: Design with adequate thermal management (e.g., heatsinks, ventilation), operate within temperature limits, and select materials with high thermal stability.
Trigger: Mechanical stress or vibration in industrial environments
Failure: Cracked encapsulation or broken leads
Mitigation: Use robust packaging (e.g., conformal coatings), secure mounting, and comply with vibration standards (e.g., IEC 60068-2-6).

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
Forward voltage: ±0.2 V, Wavelength: ±10 nm, Optical power: ±20%
Test Method
Electrical testing per IEC 60747-5-2 (forward voltage, current), optical testing (spectroradiometry for wavelength, photometry for power), isolation testing (hipot testing at 5 kV AC for 1 minute), environmental testing (temperature cycling, humidity per IEC 60068-2-78).

Buyer Feedback

★★★★☆ 4.6 / 5.0 (22 reviews)

"Reliable performance in harsh Computer, Electronic and Optical Product Manufacturing environments. No issues with the LED/Infrared Emitter so far."

"Testing the LED/Infrared Emitter now; the technical reliability results are within 1% of the laboratory datasheet."

"Impressive build quality. Especially the technical reliability is very stable during long-term operation."

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Frequently Asked Questions

What is the difference between LED and Infrared Emitters in opto-isolators?

LED emitters produce visible light and are used where visual indication is needed, while infrared emitters (typically 850-950 nm) are common in opto-isolators for higher efficiency, better coupling with silicon photodetectors, and immunity to ambient light interference.

How does an LED/Infrared Emitter ensure electrical isolation?

It converts electrical signals to light, which travels across a dielectric gap (e.g., air or transparent material) to a photodetector, preventing direct electrical contact and providing high-voltage isolation (up to 5 kV) to protect sensitive circuits.

What factors affect the lifespan of an LED/Infrared Emitter?

Key factors include operating current (higher currents reduce lifespan), temperature (excessive heat degrades materials), drive circuit design (e.g., current limiting), and environmental conditions (humidity, contaminants). Typical lifespans range from 50,000 to 100,000 hours.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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