Semiconductor device that converts optical signals into electrical signals within optocouplers for electrical isolation.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Dark Current | <10 nA | |
| Responsivity | 0.5-0.8 A/W | |
| Rise/Fall Time | 2-10 μs | |
| Isolation Voltage | 2500-5000 Vrms | |
| Spectral Response | 800-950 nm (infrared) | |
| Operating Temperature | -40°C to +100°C | |
| Current Transfer Ratio | 20-600% |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
Electrical isolation component that prevents high-voltage transients from damaging low-voltage control circuits in gate driver applications.
An electronic component that provides electrical isolation between circuits while allowing signal or power transfer.
A practical evidence checklist for RFQ preparation and supplier evaluation.
CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.
Manufacturer profiles associated with Photodetector (for optocoupler).
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
Photodiodes offer faster response times but require external amplification, while phototransistors provide higher sensitivity and built-in gain but slower switching speeds. Selection depends on application speed and sensitivity requirements.
Temperature variations affect dark current (doubles every 10°C rise), responsivity (decreases with temperature), and CTR (typically decreases 0.5-1.0%/°C). Proper thermal design and derating are essential for reliable operation.
Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.