A semiconductor device that converts light into electrical current, used for light detection and measurement in industrial applications.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rise Time | 1-100 ns | |
| Active Area | 0.1-100 mm² | |
| Capacitance | 1-100 pF | |
| Dark Current | 1-100 nA @ 10V reverse bias | |
| Responsivity | 0.5-0.7 A/W @ 900 nm | |
| Spectral Range | 400-1100 nm (Si) | |
| Reverse Voltage | 10-100 V | |
| Operating Temperature | -40°C to +85°C |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
A practical evidence checklist for RFQ preparation and supplier evaluation.
CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.
Manufacturer profiles associated with Photosensitive diode.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
In photovoltaic mode (zero bias), the diode generates voltage from light. In photoconductive mode (reverse bias), it produces current with faster response and linear output but requires external power.
Temperature increases dark current exponentially (doubling every 10°C) and slightly shifts spectral response. Industrial applications require temperature compensation circuits or thermoelectric cooling for precision measurements.
Shot noise from photon statistics, Johnson noise from shunt resistance, and 1/f noise at low frequencies. Proper shielding, filtering, and low-noise amplifiers are essential for signal integrity.
Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.