A photosensor component used in opto-isolators to detect light signals and provide electrical isolation between circuits.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Dark Current | 10-100 nA | |
| Package Type | DIP-4, DIP-6, SOP-4 | |
| Response Time | 3-20 μs | |
| Isolation Voltage | 2500-5000 Vrms | |
| Spectral Sensitivity | 850-950 nm (Infrared) | |
| Operating Temperature | -40°C to +100°C | |
| Current Transfer Ratio (CTR) | 20-600% |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Phototransistors provide higher gain and sensitivity but slower response (10-20 μs), ideal for DC/low-frequency signals. Photodiodes offer faster response (1-5 μs) but lower output, suitable for high-speed digital applications. Selection depends on speed vs. sensitivity requirements.
Temperature impacts CTR (typically decreasing by 0.5%/°C above 25°C) and dark current (doubling every 10°C rise). Industrial-grade components use temperature-compensated designs and wide operating ranges (-40°C to +100°C) for stability.
Generally yes if specifications match, particularly CTR, response time, and package. However, batch variations may require minor circuit adjustments. Always verify compatibility with manufacturer datasheets.
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