INDUSTRY COMPONENT

Phototransistor/Photodiode

Semiconductor light-sensitive devices converting optical signals to electrical signals in optocouplers for industrial isolation.

Component Specifications

Definition
Phototransistors and photodiodes are semiconductor optoelectronic components that detect light intensity and convert it into proportional electrical current. In optocoupler applications, they serve as the receiver side, isolated from the light-emitting diode (LED) transmitter by a transparent dielectric barrier, enabling signal transmission without electrical contact. Phototransistors provide current amplification through internal gain, while photodiodes offer faster response times and linearity.
Working Principle
Operates on the photoelectric effect where incident photons generate electron-hole pairs in the semiconductor depletion region. In photodiodes, this creates a photocurrent proportional to light intensity. Phototransistors amplify this current through transistor action, where the photogenerated base current controls a larger collector-emitter current. In optocouplers, an LED emits light across an isolation gap, which is detected by the photodetector to recreate the electrical signal.
Materials
Silicon (Si) for visible/NIR detection, Germanium (Ge) or Indium Gallium Arsenide (InGaAs) for infrared. Encapsulation in epoxy or silicone with optical-grade windows. Lead frames: Alloy 42 or copper.
Technical Parameters
  • Rise Time 2-100 ns (photodiode), 1-10 μs (phototransistor)
  • Dark Current <10 nA
  • Responsivity 0.5-0.6 A/W @ 850 nm
  • Spectral Range 400-1100 nm (Si)
  • Isolation Voltage 2500-5000 Vrms
  • Operating Temperature -40°C to +85°C
  • Current Transfer Ratio 20-600%
Standards
ISO 9001, IEC 60747-5-2, JEDEC JESD22

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Phototransistor/Photodiode.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Thermal degradation of optical coupling
  • Sensitivity to ambient light interference
  • CTR degradation over lifetime
  • ESD susceptibility during handling
FMEA Triads
Trigger: LED output degradation over time
Failure: Decreased Current Transfer Ratio (CTR)
Mitigation: Implement burn-in testing, use derating guidelines, and monitor CTR in critical applications
Trigger: Contamination on optical interface
Failure: Reduced light transmission and signal integrity
Mitigation: Clean room assembly, hermetic sealing, and regular optical inspection

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
±10% CTR variation, ±5% spectral response
Test Method
IEC 60747-5-2 for isolation testing, JEDEC standards for environmental reliability

Buyer Feedback

★★★★☆ 4.5 / 5.0 (25 reviews)

"The Phototransistor/Photodiode we sourced perfectly fits our Computer, Electronic and Optical Product Manufacturing production line requirements."

"Found 35+ suppliers for Phototransistor/Photodiode on CNFX, but this spec remains the most cost-effective."

"The technical documentation for this Phototransistor/Photodiode is very thorough, especially regarding technical reliability."

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Frequently Asked Questions

What is the difference between phototransistor and photodiode in optocouplers?

Phototransistors provide higher sensitivity and current gain but slower response, suitable for digital switching. Photodiodes offer faster response and better linearity, ideal for analog signal transmission.

How does isolation voltage affect optocoupler selection?

Higher isolation voltage (e.g., 5000V) is critical for industrial applications with high voltage differentials between circuits, preventing electrical breakdown and ensuring safety compliance.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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Phototransistor Die PHY (Physical Layer Interface)