Semiconductor light-sensitive devices converting optical signals to electrical signals in optocouplers for industrial isolation.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rise Time | 2-100 ns (photodiode), 1-10 μs (phototransistor) | |
| Dark Current | <10 nA | |
| Responsivity | 0.5-0.6 A/W @ 850 nm | |
| Spectral Range | 400-1100 nm (Si) | |
| Isolation Voltage | 2500-5000 Vrms | |
| Operating Temperature | -40°C to +85°C | |
| Current Transfer Ratio | 20-600% |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with Phototransistor/Photodiode.
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Phototransistors provide higher sensitivity and current gain but slower response, suitable for digital switching. Photodiodes offer faster response and better linearity, ideal for analog signal transmission.
Higher isolation voltage (e.g., 5000V) is critical for industrial applications with high voltage differentials between circuits, preventing electrical breakdown and ensuring safety compliance.
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