INDUSTRY COMPONENT

Semiconductor wafer

Semiconductor wafer is a thin slice of semiconductor material used as the substrate for fabricating integrated circuits and discrete semiconductor devices like thyristors and triacs.

Component Specifications

Definition
A semiconductor wafer is a foundational substrate typically made from high-purity silicon, though other materials like gallium arsenide may be used for specialized applications. For thyristors and triacs, the wafer serves as the base material where multiple layers of doping, metallization, and patterning create the p-n-p-n structures essential for controlled switching. These wafers undergo precise manufacturing processes including crystal growth, slicing, polishing, and cleaning to achieve the required electrical and physical properties.
Working Principle
The wafer provides the crystalline structure where semiconductor junctions are formed through doping processes. In thyristors/triacs, alternating p-type and n-type regions are created on/in the wafer to form the multi-layer structure that enables latching behavior and bidirectional current control. When appropriate gate signals are applied, these structures allow the device to switch between high-impedance (off) and low-impedance (on) states.
Materials
Primary material: Single-crystal silicon with resistivity 1-100 ohm-cm. Dopants: Boron (p-type), Phosphorus (n-type). Alternative materials: Silicon carbide (SiC) for high-temperature applications, Gallium arsenide (GaAs) for high-frequency applications. Surface finish: Chemically-mechanically polished to <1 nm roughness.
Technical Parameters
ParameterTypical rangeNotes & selection driver
Diameter100mm, 150mm, 200mm, 300mm
Thickness525μm ± 25μm (for 150mm)
Orientation<100> or <111>
Resistivity1-100 Ω·cm
Carbon Content<0.2 ppma
Oxygen Content<18 ppma
Surface Flatness<3 μm TTV
Dislocation Density<1000/cm²

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards
ISO 14644-1, SEMI M1, SEMI M59, IEC 60747

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Crystal defects affecting device performance
  • Contamination from particles or chemicals
  • Wafer warpage during high-temperature processes
  • Breakage during handling and processing
FMEA Triads
Trigger: Improper crystal growth parameters
Failure: Dislocations and stacking faults in wafer
Mitigation: Implement strict process controls during Czochralski growth, regular quality checks using X-ray topography
Trigger: Contaminated polishing slurry
Failure: Surface defects and reduced yield
Mitigation: Use filtered slurry systems, implement particle monitoring, regular equipment maintenance
Trigger: Thermal stress during diffusion processes
Failure: Wafer warpage and cracking
Mitigation: Optimize temperature ramp rates, use proper wafer carriers, implement stress monitoring

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance
Diameter: ±0.2mm, Thickness: ±25μm, Resistivity: ±10%, Orientation: ±0.5°
Test Method
Four-point probe for resistivity, FTIR for oxygen/carbon content, X-ray diffraction for orientation, surface profilometry for flatness

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
Verify equipment lists, process limits, capacity, and representative production evidence.
Inspection readiness
Confirm test methods, calibrated equipment, sampling plans, and traceable reports.
Supplier transparency
Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Semiconductor wafer

6 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.

Changchun New Industries Optoelectronics Technology Co., Ltd.
Changchun, Jilin, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Semiconductor wafer inspection”
View source page ↗ cnilaser.com · checked 2026-08-30
Nidec SV Probe
Taiwan, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Semiconductor Wafer Test Workshop 2026”
View source page ↗ nidecsvprobe.com · checked 2026-09-01
OST Photonics
Jiaxing, Zhejiang, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Semiconductor Wafers”
View source page ↗ ostphotonics.com · checked 2026-09-10
Suzhou JiuJun Intelligent Equipment Co., Ltd.
Shanghai, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Semiconductor Wafer Industry”
View source page ↗ tparobot.com · checked 2026-08-26
XIAMEN MASCERA TECHNOLOGY CO.,LTD.
Fujian, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Semiconductor Wafer Handling”
View source page ↗ mascera-tec.com · checked 2026-08-26
XIAMEN POWERWAY
Xiamen, Fujian, CN
Listed on the company's own website · profile compiled by CNFX from public sources
Listed there as: “Indium Semiconductor Wafer”
View source page ↗ powerwaywafer.com · checked 2026-09-03

Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.

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Frequently Asked Questions

What is the difference between wafers for thyristors and standard IC wafers?

Thyristor wafers typically have thicker epitaxial layers, higher voltage ratings, and different doping profiles compared to standard IC wafers. They're optimized for power handling rather than transistor density.

Can different wafer diameters be used interchangeably?

No, wafer diameter is tied to specific manufacturing equipment. Changing diameters requires complete retooling of fabrication lines and is not interchangeable.

What causes wafer breakage during thyristor manufacturing?

Common causes include thermal stress from rapid temperature changes, mechanical stress from handling equipment, crystal defects, and improper mounting during processing.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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