INDUSTRY COMPONENT

Silicon Crystal

High-purity silicon crystal used as the foundational substrate for semiconductor wafer production in electronics manufacturing.

Component Specifications

Definition
A monocrystalline silicon structure grown through the Czochralski or Float Zone method, characterized by extremely high purity (typically 99.9999999% or 9N) and specific crystallographic orientation (usually <100> or <111>), serving as the base material for silicon wafer substrates in semiconductor device fabrication.
Working Principle
Silicon crystals function as the structural foundation for integrated circuits by providing a defect-free, single-crystal lattice that enables precise doping and patterning of electronic components through photolithography and etching processes.
Materials
Electronic Grade Silicon (EG-Si) with impurity levels below 0.1 ppb for critical dopants, dislocation density <1000/cm², oxygen content 5-20 ppma, carbon content <0.1 ppma.
Technical Parameters
  • TTV <10 μm
  • Bow/Warp <50 μm
  • Diameter 150mm, 200mm, 300mm
  • Orientation <100>, <111>
  • Resistivity 1-100 Ω·cm
  • Surface Roughness <0.5 nm Ra
  • Dislocation Density <1000/cm²
  • Carbon Concentration <0.1 ppma
  • Oxygen Concentration 5-20 ppma
Standards
ISO 14644-1, SEMI M1, SEMI M59, ASTM F723, JIS H 0605

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Silicon Crystal.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Crystal defects (dislocations, stacking faults)
  • Impurity contamination during growth
  • Orientation deviation
  • Thermal stress cracking
  • Diameter control variation
FMEA Triads
Trigger: Temperature fluctuations during crystal growth
Failure: Dislocation propagation and polycrystalline formation
Mitigation: Precise temperature control systems with ±0.1°C accuracy and automated pull rate adjustment
Trigger: Crucible contamination or degradation
Failure: Metallic impurity incorporation into crystal lattice
Mitigation: High-purity quartz crucibles with protective coatings and regular replacement schedules
Trigger: Improper seed crystal alignment
Failure: Off-orientation growth affecting device performance
Mitigation: Automated alignment systems with laser measurement and real-time correction

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
Diameter: ±0.2mm, Orientation: ±0.5°, Resistivity: ±10%, Oxygen: ±2 ppma
Test Method
Four-point probe resistivity measurement, FTIR for oxygen/carbon analysis, X-ray diffraction for orientation, surface profilometry for geometry

Buyer Feedback

★★★★☆ 4.7 / 5.0 (32 reviews)

"Reliable performance in harsh Computer, Electronic and Optical Product Manufacturing environments. No issues with the Silicon Crystal so far."

"Testing the Silicon Crystal now; the technical reliability results are within 1% of the laboratory datasheet."

"Impressive build quality. Especially the technical reliability is very stable during long-term operation."

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Frequently Asked Questions

What is the difference between silicon crystal and silicon wafer?

Silicon crystal refers to the bulk monocrystalline ingot grown from molten silicon, while silicon wafers are thin slices cut from this crystal and polished for semiconductor processing.

Why is crystal orientation important in silicon substrates?

Crystal orientation (<100>, <111>, etc.) determines the electronic properties, etching characteristics, and mechanical strength of the wafer, affecting device performance and manufacturing yield.

What purity level is required for semiconductor-grade silicon crystals?

Electronic Grade Silicon requires purity of 99.9999999% (9N) or higher, with specific impurity controls for elements like oxygen, carbon, and metallic contaminants.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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