Word line is a conductive pathway in memory arrays that selects rows of memory cells for read/write operations in semiconductor devices.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Pitch | 40-200 nm | |
| Width | 20-100 nm | |
| Resistance | < 100 Ω/cm | |
| Capacitance | 10-50 fF/mm | |
| Operating Voltage | 0.8-3.3 V |
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This component is used in the following industrial products
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Word lines are horizontal conductive paths that select rows of memory cells, while bit lines are vertical paths that carry data to/from individual cells. Together they form the memory array's addressing grid.
Word line resistance and capacitance directly affect access speed and power consumption. Optimized word line design reduces RC delay, enabling faster row activation and lower energy per operation.
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