IGBT/MOSFET Array: Thermal Resistance 0.1 to 0.5 °C/W

Component Specifications

Definition

An IGBT/MOSFET Array is a power semiconductor module that integrates multiple Insulated Gate Bipolar Transistors (IGBTs) and/or Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in a single package. It is designed for high-voltage, high-current switching applications in industrial power systems, enabling efficient power conversion, motor drive control, and energy management in various industrial equipment.

Working Principle

The IGBT/MOSFET Array operates by using gate-controlled semiconductor switches to regulate power flow. IGBTs combine the high input impedance of MOSFETs with the low saturation voltage of bipolar transistors, making them suitable for high-power applications. MOSFETs offer fast switching speeds and low on-resistance. The array configuration allows for parallel or series connections to handle higher currents or voltages, with integrated drivers and protection circuits ensuring reliable operation in industrial environments.

Materials

Semiconductor substrate: Silicon (Si) or Silicon Carbide (SiC); Encapsulation: Epoxy resin or silicone gel; Baseplate: Copper or Aluminum with ceramic insulation (e.g., Al2O3, AlN); Bonding wires: Aluminum or copper; Terminals: Copper alloy with nickel or tin plating.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Current Rating	50A to 1200A per module
Voltage Rating	600V to 1700V (IGBT), 100V to 900V (MOSFET)
Thermal Resistance	0.1 to 0.5 °C/W
Switching Frequency	Up to 100 kHz (MOSFET), 5-20 kHz (IGBT)
Operating Temperature	-40°C to 150°C

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 14647, DIN EN 50178

Parent Products

This component is used in the following industrial products

Power Module

Electronic component within a speed controller that regulates and supplies electrical power to the motor.

View Product Details

Engineering Analysis

Risks & Mitigation

Thermal runaway due to inadequate cooling
Overvoltage spikes causing device failure
Electromagnetic interference (EMI) affecting control signals
Gate driver mismatch leading to switching losses

FMEA Triads

Trigger: Excessive junction temperature from poor heat dissipation
Failure: Thermal breakdown and short circuit
Mitigation: Implement active cooling (fans, liquid cooling), use thermal interface materials, and monitor temperature with sensors.

Trigger: Voltage transients from inductive loads
Failure: Overvoltage damage to semiconductor junctions
Mitigation: Install snubber circuits, use surge protection devices, and design with proper voltage derating.

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

±5% for electrical parameters under specified conditions

Test Method

Dynamic and static testing per IEC 60747-9 for IGBTs and IEC 60747-8 for MOSFETs, including thermal cycling and high-potential isolation tests.

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

Verify equipment lists, process limits, capacity, and representative production evidence.

Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

Check the legal entity, factory address, ownership, certifications, and direct contacts.

Compare the published product scope and source details, then include your specifications and quantity in an enquiry.

Manufacturers of IGBT/MOSFET Array

Manufacturer profiles associated with IGBT/MOSFET Array.

Sourcing IGBT/MOSFET Array from China?

Tell us your specification and target quantity — we will match it against manufacturer records and come back with the factories that fit.

Request manufacturers We manufacture this

Explore company information and manufacturing capabilities, then discuss the scope of your project with a relevant supplier.

Compiled and source-reviewed by the CNFX editorial team. Each manufacturer above links to the page on that company's own website where the product is listed, with the date we checked it. How we source and review

Related Components

Contact Plate

A conductive plate in motor terminal blocks that establishes electrical contact between conductors.

Marking Strip

A durable marking strip used for terminal identification in motor terminal blocks to ensure proper electrical connections and safety compliance.

Gland Body

A gland body is the main housing component of an aluminum cable gland that provides mechanical protection and environmental sealing for electrical cables entering enclosures.

Current Sense Resistor

A precision resistor used to measure current flow in electrical circuits by converting current to a measurable voltage drop.

Frequently Asked Questions

What is the difference between IGBT and MOSFET in an array?

IGBTs are optimized for high-voltage, high-current applications with moderate switching speeds (e.g., motor drives), while MOSFETs offer faster switching and lower on-resistance for high-frequency applications (e.g., switch-mode power supplies). Arrays may combine both to balance performance.

How do I select an IGBT/MOSFET Array for my application?

Consider voltage and current requirements, switching frequency, thermal management needs, and compatibility with your control system. Consult datasheets for ratings like Vce(sat) for IGBTs or Rds(on) for MOSFETs, and ensure proper cooling.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification

This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

IGBT/MOSFET Array