Bit line is a conductive pathway in memory arrays that reads and writes data from memory cells.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Pitch | 20-100 nm | |
| Width | 10-50 nm | |
| Thickness | 30-100 nm | |
| Resistance | 5-50 Ω/cm | |
| Access Time | <10 ns | |
| Capacitance | 10-100 fF | |
| Operating Voltage | 0.5-1.2V |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Bit lines run vertically and carry data signals, while word lines run horizontally and carry addressing signals. Together they form a grid that selects individual memory cells.
Copper has lower resistivity than aluminum, reducing RC delay and power consumption while enabling higher density and faster memory access.
Bit line resistance and capacitance directly impact access time, power consumption, and signal integrity. Lower RC values enable faster read/write operations and higher memory bandwidth.
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