Configuration memory cells are non-volatile storage elements in programmable interconnect devices that store configuration data to define routing paths and logic functions.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Cell Size | Typically 0.1-1.0 μm² per bit | |
| Endurance | 10^3 to 10^6 write cycles (varies by technology) | |
| Access Time | <100 ns for read operations | |
| Storage Type | Non-volatile (Flash, EEPROM, Antifuse) | |
| Retention Time | >10 years | |
| Operating Voltage | 1.2V to 3.3V |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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They store the configuration data that defines how logic blocks and routing resources are interconnected, allowing the device to implement custom digital circuits.
They use non-volatile technologies like floating-gate charge storage or antifuse links, which maintain their state permanently or semi-permanently without external power.
Yes, in technologies like Flash or EEPROM, they can be erased and reprogrammed multiple times, while antifuse-based cells are one-time programmable (OTP).
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