INDUSTRY COMPONENT

Infrared LED Die

Infrared LED die is a semiconductor light-emitting component that emits infrared radiation when electrically activated, used for optical isolation and signal transmission in photocouplers.

Component Specifications

Definition
An infrared LED die is a miniature semiconductor device fabricated from gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs) materials, designed to emit electromagnetic radiation in the infrared spectrum (typically 850-950 nm wavelength) when forward-biased. As the core light source in photocoupler assemblies, it converts electrical signals into optical signals that traverse an isolation barrier to activate a photodetector, enabling galvanic isolation between circuits.
Working Principle
Operates on electroluminescence principle: when forward voltage is applied across the p-n junction, electrons and holes recombine in the active region, releasing energy as photons in the infrared spectrum. The emitted IR light intensity is directly proportional to the forward current.
Materials
Gallium Arsenide (GaAs) or Aluminum Gallium Arsenide (AlGaAs) epitaxial layers on substrate, with gold or aluminum bonding wires, encapsulated in transparent silicone or epoxy for optical transmission.
Technical Parameters
ParameterTypical rangeNotes & selection driver
Wavelength850-950 nm
Viewing Angle15-30 degrees
Rise/Fall Time10-100 ns
Forward Current20-100 mA
Forward Voltage1.2-1.6V
Radiant Intensity10-100 mW/sr

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards
IEC 60747-5-2, JEDEC JESD22

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Electrostatic discharge damage during handling
  • Thermal degradation from excessive current
  • Delamination of encapsulation materials
  • Wavelength drift over temperature cycles
FMEA Triads
Trigger: Excessive forward current beyond specifications
Failure: Thermal runaway leading to catastrophic failure
Mitigation: Implement current-limiting circuits and thermal management in driver design
Trigger: Electrostatic discharge during assembly
Failure: Latent or immediate junction damage reducing output
Mitigation: ESD-protected workstations and proper handling procedures

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance
±5% wavelength variation, ±10% radiant intensity
Test Method
IEC 60747-5-2 for optoelectronic devices, including spectral distribution, forward voltage, and radiant intensity measurements under controlled conditions

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
Verify equipment lists, process limits, capacity, and representative production evidence.
Inspection readiness
Confirm test methods, calibrated equipment, sampling plans, and traceable reports.
Supplier transparency
Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Infrared LED Die

Manufacturer profiles associated with Infrared LED Die.

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Frequently Asked Questions

What is the primary function of an infrared LED die in photocouplers?

The infrared LED die serves as the light source that converts electrical input signals into infrared optical signals, which then cross an isolation gap to activate a photodetector, providing electrical isolation between circuits while transmitting signals.

Why are infrared wavelengths preferred over visible light in photocouplers?

Infrared wavelengths (850-950 nm) are used because silicon photodetectors have peak sensitivity in this range, resulting in higher efficiency. Additionally, IR light is invisible, reduces interference from ambient light, and allows for better material compatibility with encapsulation compounds.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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