A semiconductor device that stores digital data in electronic systems, serving as the core element of RAM modules.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Speed | 3200 MT/s to 6400 MT/s data rate | |
| Package | FBGA, WLCSP, TSV | |
| Voltage | 1.2V to 1.8V operating | |
| Capacity | 4GB to 64GB per die | |
| Interface | DDR4, DDR5, LPDDR4X, GDDR6 | |
| Technology | 10nm to 20nm process node | |
| Temperature | -40°C to +95°C operating range |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with Memory Integrated Circuit (IC) / Die.
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A memory IC is the individual semiconductor die containing memory cells, while a RAM module combines multiple ICs on a PCB with support components like registers and power management circuits.
Smaller process nodes (e.g., 10nm vs 20nm) enable higher density, lower power consumption, and potentially faster switching speeds, but require more advanced manufacturing techniques.
Charge leakage in capacitor-based cells (DRAM) requires periodic refresh cycles; transistor leakage in SRAM can cause data loss; both are affected by temperature and voltage variations.
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