Metallization and bonding pads are conductive interfaces on photodiode arrays for electrical connections and signal transmission.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Pad Size | 50-150 μm diameter | |
| Metal Thickness | 0.5-2 μm | |
| Sheet Resistance | <0.1 Ω/sq | |
| Adhesion Strength | >50 MPa | |
| Wire Bond Pull Strength | >5 gf |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with Metallization / Bonding Pads.
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Bonding pads provide reliable electrical connection points for wire bonding or flip-chip attachments, enabling signal transmission from the photodiode to external circuits with minimal resistance and signal degradation.
Gold offers excellent conductivity, corrosion resistance, and ductility, making it ideal for wire bonding processes. It also forms reliable intermetallic bonds with aluminum wires, ensuring long-term stability in harsh environments.
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