Photodiode (Receiver): Wavelength Range 850-1650 nm

Component Specifications

Definition

A photodiode is a specialized semiconductor component designed to detect and convert incident light photons into proportional electrical current through the photoelectric effect. In transceiver modules, it serves as the optical receiver that captures modulated light signals from optical fibers and transforms them into electrical signals for further processing by communication systems. These devices operate in reverse bias mode to achieve fast response times and high sensitivity across specific wavelength ranges.

Working Principle

Operates on the photoelectric effect where incident light photons with sufficient energy create electron-hole pairs in the semiconductor's depletion region. Under reverse bias voltage, these charge carriers are swept across the junction, generating a photocurrent proportional to the light intensity. The PIN (p-i-n) structure is commonly used for optimal performance in communication applications.

Materials

Semiconductor materials: Silicon (Si) for 400-1100 nm wavelengths, Germanium (Ge) for 800-1700 nm, Indium Gallium Arsenide (InGaAs) for 900-1700 nm. Package materials: Ceramic or metal housings with glass or epoxy windows.

Technical Parameters

Parameter	Typical range	Notes & selection driver
Bandwidth	1-10 GHz
Rise Time	0.1-1.0 ns
Dark Current	1-10 nA
Package Type	TO-can, Butterfly, Surface Mount
Responsivity	0.8-1.0 A/W
Wavelength Range	850-1650 nm
Operating Voltage	3-5 V

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards

ISO 11801, IEC 60793-2, Telcordia GR-468-CORE

Parent Products

This component is used in the following industrial products

Transceiver Module

A compact electronic component that integrates both transmitter and receiver functions for data communication.

View Product Details

Engineering Analysis

Risks & Mitigation

Thermal damage from excessive optical power
Electrostatic discharge sensitivity
Wavelength mismatch causing reduced efficiency
Package hermeticity failure leading to moisture ingress

FMEA Triads

Trigger: Excessive optical input power
Failure: Saturation or permanent damage to semiconductor junction
Mitigation: Implement optical power monitoring and automatic gain control circuits

Trigger: Electrostatic discharge during handling
Failure: Degraded performance or complete device failure
Mitigation: Use ESD-protected workstations and proper grounding procedures

Trigger: Temperature cycling stress
Failure: Package seal failure leading to moisture ingress
Mitigation: Use ceramic packages with proven hermetic seals and conduct accelerated life testing

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance

±0.1 dB responsivity variation across operating temperature range

Test Method

IEC 60793-2 for optical characteristics, Telcordia GR-468-CORE for reliability testing

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation

Request current drawings, revision history, and a signed specification sheet.

Manufacturing capability

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Inspection readiness

Confirm test methods, calibrated equipment, sampling plans, and traceable reports.

Supplier transparency

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Manufacturers of Photodiode (Receiver)

Manufacturer profiles associated with Photodiode (Receiver).

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Compiled and source-reviewed by the CNFX editorial team. Each manufacturer above links to the page on that company's own website where the product is listed, with the date we checked it. How we source and review

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Frequently Asked Questions

What is the difference between PIN and APD photodiodes?

PIN photodiodes have a simple intrinsic region structure with linear response, while APD (Avalanche Photodiode) photodiodes use internal gain through avalanche multiplication for higher sensitivity but require precise voltage control.

How does wavelength affect photodiode selection?

Material selection depends on target wavelength: Silicon for visible/short infrared (400-1100 nm), Germanium for near-infrared (800-1700 nm), and InGaAs for telecommunications bands (1310/1550 nm).

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification

This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

Photodiode (Receiver)