INDUSTRY COMPONENT

Photodiode (Receiver)

A semiconductor device that converts light signals into electrical current, used as the receiver in optical communication transceiver modules.

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Component Specifications

Definition
A photodiode is a specialized semiconductor component designed to detect and convert incident light photons into proportional electrical current through the photoelectric effect. In transceiver modules, it serves as the optical receiver that captures modulated light signals from optical fibers and transforms them into electrical signals for further processing by communication systems. These devices operate in reverse bias mode to achieve fast response times and high sensitivity across specific wavelength ranges.
Working Principle
Operates on the photoelectric effect where incident light photons with sufficient energy create electron-hole pairs in the semiconductor's depletion region. Under reverse bias voltage, these charge carriers are swept across the junction, generating a photocurrent proportional to the light intensity. The PIN (p-i-n) structure is commonly used for optimal performance in communication applications.
Materials
Semiconductor materials: Silicon (Si) for 400-1100 nm wavelengths, Germanium (Ge) for 800-1700 nm, Indium Gallium Arsenide (InGaAs) for 900-1700 nm. Package materials: Ceramic or metal housings with glass or epoxy windows.
Technical Parameters
  • Bandwidth 1-10 GHz
  • Rise Time 0.1-1.0 ns
  • Dark Current 1-10 nA
  • Package Type TO-can, Butterfly, Surface Mount
  • Responsivity 0.8-1.0 A/W
  • Wavelength Range 850-1650 nm
  • Operating Voltage 3-5 V
Standards
ISO 11801, IEC 60793-2, Telcordia GR-468-CORE

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photodiode (Receiver).

photodiode receiver optical receiver transceiver module InGaAs photodiode optical communication fiber optics photodetector Photodiode (Receiver) Photodiode (Receiver) in Computer, Electronic and Optical Product Manufacturing

Parent Products

This component is used in the following industrial products

Transceiver Module

A compact electronic component that integrates both transmitter and receiver functions for data communication.

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Engineering Analysis

Risks & Mitigation
  • Thermal damage from excessive optical power
  • Electrostatic discharge sensitivity
  • Wavelength mismatch causing reduced efficiency
  • Package hermeticity failure leading to moisture ingress
FMEA Triads
Trigger: Excessive optical input power
Failure: Saturation or permanent damage to semiconductor junction
Mitigation: Implement optical power monitoring and automatic gain control circuits
Trigger: Electrostatic discharge during handling
Failure: Degraded performance or complete device failure
Mitigation: Use ESD-protected workstations and proper grounding procedures
Trigger: Temperature cycling stress
Failure: Package seal failure leading to moisture ingress
Mitigation: Use ceramic packages with proven hermetic seals and conduct accelerated life testing

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
±0.1 dB responsivity variation across operating temperature range
Test Method
IEC 60793-2 for optical characteristics, Telcordia GR-468-CORE for reliability testing

Buyer Feedback

★★★★☆ 4.7 / 5.0 (29 reviews)

"Standard OEM quality for Computer, Electronic and Optical Product Manufacturing applications. The Photodiode (Receiver) arrived with full certification."

"Great transparency on the Photodiode (Receiver) components. Essential for our Computer, Electronic and Optical Product Manufacturing supply chain."

"The Photodiode (Receiver) we sourced perfectly fits our Computer, Electronic and Optical Product Manufacturing production line requirements."

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Frequently Asked Questions

What is the difference between PIN and APD photodiodes?

PIN photodiodes have a simple intrinsic region structure with linear response, while APD (Avalanche Photodiode) photodiodes use internal gain through avalanche multiplication for higher sensitivity but require precise voltage control.

How does wavelength affect photodiode selection?

Material selection depends on target wavelength: Silicon for visible/short infrared (400-1100 nm), Germanium for near-infrared (800-1700 nm), and InGaAs for telecommunications bands (1310/1550 nm).

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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