A photodiode array is a semiconductor device consisting of multiple photodiodes arranged in a linear or matrix pattern, used for converting light signals into electrical signals in imaging applications.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Pixel Pitch | 10-100 μm | |
| Dark Current | <1 nA/cm² at 25°C | |
| Dynamic Range | 60-100 dB | |
| Response Time | 1-100 ns | |
| Spectral Range | 400-1100 nm (Si) | |
| Operating Voltage | 5-15 V | |
| Quantum Efficiency | >80% at peak wavelength | |
| Array Configuration | Linear: 128-4096 elements, Area: 256x256 to 4096x4096 |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Photodiode arrays are the light-sensitive elements in both CCD and CMOS sensors. CCDs use charge-coupled devices for readout, while CMOS sensors integrate amplification and readout circuits at each pixel. PDAs provide the photodetection function in both architectures.
Smaller pixel pitch increases spatial resolution but reduces light collection area per pixel, potentially decreasing signal-to-noise ratio. Optimal pitch balances resolution requirements with sensitivity needs for specific applications.
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