INDUSTRY COMPONENT

Photodiode

A semiconductor device that converts light into electrical current, used for light detection in industrial imaging systems.

Component Specifications

Definition
A photodiode is a specialized semiconductor component designed to detect and convert incident light into an electrical current through the photoelectric effect. In industrial applications, it serves as the fundamental light-sensing element within image sensor arrays, capturing photons and generating proportional electrical signals for processing. These devices are engineered for precise spectral response, high sensitivity, and fast response times to ensure accurate image capture in various lighting conditions.
Working Principle
Operates on the principle of the photoelectric effect where incident photons with sufficient energy strike the semiconductor material (typically silicon, germanium, or InGaAs), creating electron-hole pairs. When reverse-biased, these charge carriers are swept across the depletion region, generating a photocurrent proportional to the light intensity. The generated current is then amplified and processed to form digital image data.
Materials
Semiconductor materials: Silicon (Si) for visible to near-infrared range (400-1100 nm), Germanium (Ge) for infrared (800-1700 nm), Indium Gallium Arsenide (InGaAs) for extended infrared (900-2600 nm). Package materials: Ceramic or metal housing with glass or quartz window for optical access.
Technical Parameters
  • Active Area 0.1-100 mm²
  • Dark Current 1-100 nA
  • Responsivity 0.5-0.7 A/W
  • Response Time 1-100 ns
  • Spectral Range 400-1100 nm (Si)
  • Operating Voltage 5-100 V reverse bias
  • Temperature Range -40°C to +85°C
Standards
ISO 9022-11, IEC 60747-5, JEDEC JESD22

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photodiode.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Optical surface contamination
  • Electrostatic discharge damage
  • Thermal drift affecting accuracy
  • Saturation from excessive light intensity
  • Spectral mismatch with application
FMEA Triads
Trigger: Optical window contamination
Failure: Reduced light transmission and inaccurate readings
Mitigation: Regular cleaning schedule, protective coatings, sealed housing design
Trigger: Electrostatic discharge during handling
Failure: Permanent semiconductor damage and complete failure
Mitigation: ESD-protected workstations, proper grounding procedures, built-in protection diodes
Trigger: Thermal expansion mismatch
Failure: Mechanical stress leading to cracked die or bond wire failure
Mitigation: CTE-matched materials, stress-relief designs, temperature cycling testing

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
±5% responsivity variation across production batch, ±2nm spectral response shift
Test Method
IEC 60747-5-2 for optoelectronic devices, calibrated light source measurement, dark current testing at specified temperatures

Buyer Feedback

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Frequently Asked Questions

What is the difference between a photodiode and a phototransistor?

Photodiodes generate current proportional to light intensity with faster response times but lower sensitivity, while phototransistors provide current amplification but slower response. Photodiodes are preferred for high-speed imaging applications.

How does temperature affect photodiode performance?

Temperature increases dark current (approximately doubling every 10°C rise) and can shift spectral response. Industrial photodiodes often include temperature compensation circuits or cooling for stable operation.

What maintenance do industrial photodiodes require?

Regular cleaning of optical surfaces, periodic calibration against known light sources, and monitoring of dark current drift. Most industrial photodiodes are sealed units requiring no internal maintenance.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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