Photosensitive region converts light into electrical signals in CCD detectors for industrial imaging.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Pixel Size | 3-30 μm | |
| Fill Factor | >90% | |
| Dark Current | <0.1 nA/cm² at 25°C | |
| Dynamic Range | >70 dB | |
| Spectral Response | 400-1100 nm | |
| Quantum Efficiency | >70% at 550 nm |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with Photosensitive Region.
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Sensitivity is determined by quantum efficiency, pixel size, fill factor, and semiconductor material properties, with optimized designs achieving over 70% quantum efficiency in visible spectrum.
Higher temperatures increase dark current (thermal noise) and reduce signal-to-noise ratio, requiring cooling systems for precision applications to maintain <0.1 nA/cm² dark current.
Yes, through material selection (e.g., silicon for visible, InGaAs for infrared) and anti-reflective coating optimization, spectral response can be tailored from 200 nm to 1700 nm.
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