INDUSTRY COMPONENT

Photosensitive Region

Photosensitive region converts light into electrical signals in CCD detectors for industrial imaging.

Component Specifications

Definition
The photosensitive region is a critical component within a CCD (Charge-Coupled Device) detector array that consists of an array of photodiodes or photogates. When exposed to light, these elements generate electron-hole pairs proportional to the incident photon flux, creating an electrical charge that is subsequently transferred and converted into digital image data through the CCD's readout circuitry.
Working Principle
Operates on the photoelectric effect where incident photons strike semiconductor material (typically silicon), generating electron-hole pairs. The accumulated charge in each pixel is proportional to light intensity and exposure time, then transferred via potential wells created by applied voltages to output amplifiers for signal processing.
Materials
Single-crystal silicon substrate with doped regions (p-type/n-type), silicon dioxide insulating layers, polysilicon electrodes, and anti-reflective coatings (silicon nitride or titanium dioxide).
Technical Parameters
  • Pixel Size 3-30 μm
  • Fill Factor >90%
  • Dark Current <0.1 nA/cm² at 25°C
  • Dynamic Range >70 dB
  • Spectral Response 400-1100 nm
  • Quantum Efficiency >70% at 550 nm
Standards
ISO 12232, ISO 15739, DIN 58141-2

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photosensitive Region.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Quantum efficiency degradation over time
  • Dark current increase with temperature
  • Pixel defects from manufacturing
  • Charge transfer inefficiency
  • Blooming in high-light conditions
FMEA Triads
Trigger: Contamination during semiconductor processing
Failure: Dead pixels or reduced quantum efficiency
Mitigation: Cleanroom manufacturing with particle monitoring and automated optical inspection
Trigger: Electrostatic discharge during handling
Failure: Gate oxide breakdown and permanent damage
Mitigation: ESD-protected workstations, conductive packaging, and operator training
Trigger: Thermal stress from improper cooling
Failure: Increased dark current and reduced dynamic range
Mitigation: Active cooling systems with temperature monitoring and thermal interface optimization

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
Pixel pitch tolerance ±0.1 μm, quantum efficiency variation <5% across array
Test Method
ISO 12232 for sensitivity measurement, dark current testing at multiple temperatures, modulation transfer function analysis

Buyer Feedback

★★★★☆ 4.8 / 5.0 (25 reviews)

"The Photosensitive Region we sourced perfectly fits our Computer, Electronic and Optical Product Manufacturing production line requirements."

"Found 19+ suppliers for Photosensitive Region on CNFX, but this spec remains the most cost-effective."

"The technical documentation for this Photosensitive Region is very thorough, especially regarding technical reliability."

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Frequently Asked Questions

What determines the sensitivity of a photosensitive region?

Sensitivity is determined by quantum efficiency, pixel size, fill factor, and semiconductor material properties, with optimized designs achieving over 70% quantum efficiency in visible spectrum.

How does temperature affect photosensitive region performance?

Higher temperatures increase dark current (thermal noise) and reduce signal-to-noise ratio, requiring cooling systems for precision applications to maintain <0.1 nA/cm² dark current.

Can photosensitive regions be customized for specific wavelengths?

Yes, through material selection (e.g., silicon for visible, InGaAs for infrared) and anti-reflective coating optimization, spectral response can be tailored from 200 nm to 1700 nm.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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