Industry-Verified Manufacturing Data (2026)

CCD Detector Array

Based on aggregated insights from multiple verified factory profiles within the CNFX directory, the standard CCD Detector Array used in the Computer, Electronic and Optical Product Manufacturing sector typically supports operational capacities ranging from standard industrial configurations to heavy-duty production requirements.

Technical Definition & Core Assembly

A canonical CCD Detector Array is characterized by the integration of Photosensitive Region and Charge Transfer Structure. In industrial production environments, manufacturers listed on CNFX commonly emphasize Silicon construction to support stable, high-cycle operation across diverse manufacturing scenarios.

A photosensitive electronic component that converts light signals into electrical signals for detection and measurement in optical spectrometers.

Product Specifications

Technical details and manufacturing context for CCD Detector Array

Definition
A CCD (Charge-Coupled Device) Detector Array is a critical component within an optical spectrometer that functions as the light detection system. It consists of multiple photosensitive pixels arranged in a linear or two-dimensional array, which captures incoming light dispersed by the spectrometer's optical elements. Each pixel generates an electrical charge proportional to the intensity of incident light, allowing for precise measurement of light intensity across different wavelengths. This enables the spectrometer to produce detailed spectral data for analysis of material composition, chemical properties, or other optical characteristics.
Working Principle
The CCD Detector Array operates on the principle of the photoelectric effect. When photons strike the silicon-based photosensitive surface, they generate electron-hole pairs. The resulting electrical charges are collected in potential wells at each pixel site. These charges are then sequentially transferred through the CCD structure (via clocked voltage pulses) to an output amplifier, where they are converted into voltage signals. The magnitude of these signals corresponds to the intensity of light at specific wavelength positions determined by the spectrometer's dispersion element.
Common Materials
Silicon, Silicon dioxide, Polycrystalline silicon, Aluminum
Technical Parameters
  • Number of photosensitive elements in the array, determining spectral resolution and detection range (pixels) Standard Spec
Components / BOM
  • Photosensitive Region
    Converts incident photons into electrical charges through the photoelectric effect
    Material: Silicon
  • Charge Transfer Structure
    Sequentially moves accumulated charges from pixel to pixel toward the output node
    Material: Polycrystalline silicon
  • Output Amplifier
    Converts the transferred charge packets into measurable voltage signals
    Material: Silicon
  • Protective Window
    Provides physical protection while allowing transmission of relevant wavelengths
    Material: Quartz or specialized glass
Engineering Reasoning
200-1100 nm wavelength, -40°C to +85°C ambient temperature, 3.3-5.0 VDC supply voltage
Quantum efficiency drops below 15% at 400 nm, dark current exceeds 1000 e-/pixel/s at 25°C, readout noise surpasses 50 e- RMS
Design Rationale: Silicon bandgap limitation (1.12 eV) causing photon absorption cutoff, thermally generated electron-hole pairs in depletion region, Johnson-Nyquist noise in readout circuitry
Risk Mitigation (FMEA)
Trigger UV photon flux exceeding 10^15 photons/cm²/s at 250 nm
Mode: Silicon lattice displacement damage causing permanent quantum efficiency degradation
Strategy: Fused silica window with MgF₂ coating providing 99.5% UV attenuation below 300 nm
Trigger Thermal cycling between -40°C and +85°C at 10°C/min rate
Mode: CTE mismatch (silicon: 2.6 ppm/°C, ceramic package: 7.0 ppm/°C) inducing microcrack propagation in wire bonds
Strategy: Kovar interposer (CTE: 5.3 ppm/°C) with gold-tin eutectic bonding (melting point: 280°C)

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for CCD Detector Array.

Applied To / Applications

This component is essential for the following industrial systems and equipment:

Industrial Ecosystem & Supply Chain DNA

Complementary Systems
Downstream Applications
Specialized Tooling

Application Fit & Sizing Matrix

Operational Limits
pressure: Atmospheric (sealed package, not pressure-rated)
other spec: Max illumination: 100 mW/cm², Dark current: <0.1 nA/cm² at 25°C
temperature: -20°C to +60°C (operating), -40°C to +85°C (storage)
Media Compatibility
✓ Visible light spectrum (400-700 nm) ✓ UV-enhanced range (200-400 nm) ✓ Near-infrared (700-1100 nm) with appropriate coating
Unsuitable: High-energy radiation environments (X-ray, gamma) without shielding
Sizing Data Required
  • Spectral range required (nm)
  • Pixel resolution and array size (e.g., 2048x2048)
  • Quantum efficiency at target wavelength (%)

Reliability & Engineering Risk Analysis

Failure Mode & Root Cause
Pixel Degradation
Cause: Radiation damage from prolonged exposure to high-energy particles or UV light, leading to dark current increase and charge transfer inefficiency.
Thermal Stress Failure
Cause: Cyclic thermal expansion/contraction from inadequate temperature control, causing microcracks in silicon substrate or solder joint fatigue in readout electronics.
Maintenance Indicators
  • Increasing dark noise or hot pixel count in calibration images
  • Intermittent data dropouts or readout errors during operation
Engineering Tips
  • Implement active cooling with PID temperature control to maintain stable operating temperature (±0.5°C) and minimize thermal cycling stress
  • Use radiation-hardened shielding and implement periodic pixel calibration routines to compensate for gradual degradation effects

Compliance & Manufacturing Standards

Reference Standards
ISO 12233:2017 (Photography - Electronic still-picture imaging - Resolution and spatial frequency responses) ANSI/IES LM-79-19 (Electrical and Photometric Measurements of Solid-State Lighting Products) DIN EN 60747-5-5 (Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers)
Manufacturing Precision
  • Pixel pitch uniformity: +/- 0.5% across array
  • Quantum efficiency variation: +/- 2% at specified wavelength
Quality Inspection
  • Dark current and read noise measurement
  • Modulation Transfer Function (MTF) analysis

Factories Producing CCD Detector Array

Verified manufacturers with capability to produce this product in China

✓ 94% Supplier Capability Match Found

P Procurement Specialist from United Arab Emirates Feb 28, 2026
★★★★★
"The technical documentation for this CCD Detector Array is very thorough, especially regarding technical reliability."
Technical Specifications Verified
T Technical Director from Australia Feb 25, 2026
★★★★★
"Reliable performance in harsh Computer, Electronic and Optical Product Manufacturing environments. No issues with the CCD Detector Array so far."
Technical Specifications Verified
P Project Engineer from Singapore Feb 22, 2026
★★★★★
"Testing the CCD Detector Array now; the technical reliability results are within 1% of the laboratory datasheet."
Technical Specifications Verified
Verification Protocol

“Feedback is collected from verified sourcing managers during RFQ (Request for Quote) and factory evaluation processes on CNFX. These reports represent historical performance data and technical audit summaries from our B2B manufacturing network.”

9 sourcing managers are analyzing this specification now. Last inquiry for CCD Detector Array from USA (1h ago).

Supply Chain Compatible Machinery & Devices

Modular Industrial Edge Computing Device

Rugged computing platform for industrial data processing at the network edge

Explore Specs →
Industrial Smart Camera Module

Embedded vision system for industrial automation and quality inspection.

Explore Specs →
Industrial Wireless Power Transfer Module

Wireless power transfer module for industrial equipment applications

Explore Specs →
Industrial Smart Sensor Module

Modular industrial sensor with embedded processing and wireless connectivity

Explore Specs →

Frequently Asked Questions

What is the primary application of this CCD detector array?

This CCD detector array is designed for optical spectrometers, where it converts light signals into electrical signals for precise detection and measurement in analytical instruments.

What materials are used in the construction of this CCD detector?

The detector is constructed using silicon as the photosensitive material, with silicon dioxide and polycrystalline silicon for insulation and circuitry, and aluminum for electrical connections.

How does the charge transfer structure improve detector performance?

The charge transfer structure efficiently moves accumulated electrical charges from the photosensitive region to the output amplifier, minimizing signal loss and enabling high-speed, low-noise readout for accurate measurements.

Can I contact factories directly on CNFX?

CNFX is an open directory, not a transaction platform. Each factory profile provides direct contact information and production details to help you initiate direct inquiries with Chinese suppliers.

Get Quote for CCD Detector Array

Request technical pricing, lead times, or customized specifications for CCD Detector Array directly from verified manufacturing units.

Your business information is encrypted and only shared with verified CCD Detector Array suppliers.

Thank you! Your message has been sent. We'll respond within 1–3 business days.
Thank you! Your message has been sent. We'll respond within 1–3 business days.

Need to Manufacture CCD Detector Array?

Connect with verified factories specializing in this product category

Add Your Factory Contact Us
Previous Product
Cavity Body
Next Product
Cell Balancing Circuit