Semiconductor component converting light signals into electrical current for isolation and sensing applications.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Package Type | Surface-mount (SMD) or through-hole | |
| Rise/Fall Time | 2-15μs | |
| Isolation Voltage | 1500-5000Vrms | |
| Collector Current (Ic) | 10-100mA | |
| Wavelength Sensitivity | 400-1100 nm (peak around 850-950 nm) | |
| Current Transfer Ratio (CTR) | 20-600% | |
| Collector Emitter Voltage (Vceo) | 30-80V |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
A practical evidence checklist for RFQ preparation and supplier evaluation.
CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.
Manufacturer profiles associated with Phototransistor Die.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
A phototransistor die provides internal current amplification (gain) through transistor action, making it more sensitive than a photodiode which has no amplification. Phototransistors have slower response times but higher output current for given light levels.
Temperature increases dark current (leakage) and can reduce current transfer ratio (CTR). Proper thermal design and derating are essential for stable operation in industrial environments.
Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.