INDUSTRY COMPONENT

Phototransistor Die

Semiconductor component converting light signals into electrical current for isolation and sensing applications.

Component Specifications

Definition
A phototransistor die is the semiconductor core of a phototransistor, typically fabricated from silicon or other semiconductor materials. It functions as a light-sensitive transistor where incident photons generate electron-hole pairs in the base region, amplifying the photocurrent through transistor action. This component is the critical element in photocouplers/optoisolators, providing electrical isolation between circuits while transmitting signals via light.
Working Principle
Operates on the photoelectric effect combined with bipolar transistor amplification. When light strikes the base-collector junction, photons generate electron-hole pairs, creating a base current proportional to light intensity. This current is amplified by the transistor's current gain (β), producing a larger collector current output. In photocoupler assemblies, an LED emits light onto the phototransistor die, creating an isolated signal path.
Materials
Silicon (Si) semiconductor substrate with doped regions (N-type and P-type), silicon dioxide (SiO₂) passivation layers, aluminum or gold metallization for contacts, and sometimes epoxy encapsulation in final assembly.
Technical Parameters
ParameterTypical rangeNotes & selection driver
Package TypeSurface-mount (SMD) or through-hole
Rise/Fall Time2-15μs
Isolation Voltage1500-5000Vrms
Collector Current (Ic)10-100mA
Wavelength Sensitivity400-1100 nm (peak around 850-950 nm)
Current Transfer Ratio (CTR)20-600%
Collector Emitter Voltage (Vceo)30-80V

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards
IEC 60747-5-2, JEDEC JESD22

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • ESD sensitivity during handling
  • Contamination affecting light sensitivity
  • Thermal runaway at high currents
  • Degradation from prolonged UV exposure
FMEA Triads
Trigger: Electrostatic discharge (ESD) during assembly
Failure: Permanent damage to semiconductor junctions
Mitigation: Implement ESD-protected workstations, proper grounding, and handling procedures
Trigger: Moisture ingress in packaging
Failure: Corrosion of metallization, reduced reliability
Mitigation: Use hermetic sealing or moisture-resistant encapsulants, follow IPC moisture sensitivity levels
Trigger: Excessive forward current in driving LED
Failure: Premature aging, reduced CTR over time
Mitigation: Implement current limiting circuits, derate operating parameters

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance
±10% on CTR, ±5nm on spectral response
Test Method
IEC 60747-5-2 for optoelectronic devices, including light-current characteristics, isolation voltage testing, and environmental stress testing

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
Verify equipment lists, process limits, capacity, and representative production evidence.
Inspection readiness
Confirm test methods, calibrated equipment, sampling plans, and traceable reports.
Supplier transparency
Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of Phototransistor Die

Manufacturer profiles associated with Phototransistor Die.

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Frequently Asked Questions

What is the difference between a phototransistor die and a photodiode?

A phototransistor die provides internal current amplification (gain) through transistor action, making it more sensitive than a photodiode which has no amplification. Phototransistors have slower response times but higher output current for given light levels.

How does temperature affect phototransistor die performance?

Temperature increases dark current (leakage) and can reduce current transfer ratio (CTR). Proper thermal design and derating are essential for stable operation in industrial environments.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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