Industry-Verified Manufacturing Data (2026)

Photodetector Module

Based on aggregated insights from multiple verified factory profiles within the CNFX directory, the standard Photodetector Module used in the Computer, Electronic and Optical Product Manufacturing sector typically supports operational capacities ranging from standard industrial configurations to heavy-duty production requirements.

Technical Definition & Core Assembly

A canonical Photodetector Module is characterized by the integration of Photodiode Chip and Transimpedance Amplifier (TIA). In industrial production environments, manufacturers listed on CNFX commonly emphasize Semiconductor (e.g., Silicon, InGaAs) construction to support stable, high-cycle operation across diverse manufacturing scenarios.

A modular electronic component that converts incident light into an electrical signal.

Product Specifications

Technical details and manufacturing context for Photodetector Module

Definition
A photodetector module is a self-contained electronic assembly designed as part of a sensor array, such as those used in laser displacement systems. Its primary function is to detect and measure light intensity, converting photons into a proportional electrical current or voltage signal for processing by the array's control unit.
Working Principle
The module operates on the principle of the photoelectric effect. When photons strike the active area of the photodetector (e.g., a photodiode or phototransistor within the module), they generate electron-hole pairs, creating a measurable photocurrent. This analog signal is then conditioned (e.g., amplified, filtered) by integrated circuitry within the module before being output.
Common Materials
Semiconductor (e.g., Silicon, InGaAs), Ceramic/PCB substrate, Protective housing (plastic/metal)
Technical Parameters
  • Spectral Response Range - The wavelengths of light the detector is sensitive to. (nm) Customizable
Components / BOM
  • Photodiode Chip
    The core light-sensitive semiconductor element that generates photocurrent.
    Material: Silicon or compound semiconductor (e.g., InGaAs)
  • Transimpedance Amplifier (TIA)
    Converts the small photocurrent from the photodiode into a proportional voltage signal.
    Material: Integrated circuit (silicon)
  • Optical Window/Filter
    Protects the sensitive chip and can filter specific wavelengths of light.
    Material: Glass or optical polymer
Engineering Reasoning
400-1100 nm wavelength, 0.1-100 mW/cm² irradiance, -40°C to +85°C temperature
Photodiode junction temperature exceeds 125°C, incident light intensity surpasses 150 mW/cm², reverse bias voltage exceeds 5V
Design Rationale: Thermal runaway from excessive photocurrent (P=IV heating), avalanche breakdown at reverse bias >5V, lattice damage from photon energy >1.1 eV exceeding silicon bandgap
Risk Mitigation (FMEA)
Trigger Reverse bias voltage surge to 7V during power transients
Mode: Avalanche breakdown causing permanent junction damage
Strategy: Zener diode clamping at 4.7V parallel to photodiode
Trigger Ambient temperature rise to 95°C with 80 mW/cm² incident light
Mode: Thermal runaway increasing dark current to 100 nA (10x nominal)
Strategy: Thermal pad with 2.5°C/W resistance to heatsink

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for Photodetector Module.

Applied To / Applications

This component is essential for the following industrial systems and equipment:

Industrial Ecosystem & Supply Chain DNA

Complementary Systems
Downstream Applications
Specialized Tooling

Application Fit & Sizing Matrix

Operational Limits
pressure: 0 to 1 atm (standard atmospheric)
other spec: Wavelength range: 400-1100 nm, Response time: <10 ns
temperature: -40°C to +85°C
Media Compatibility
✓ Clear optical windows ✓ Fiber optic cables ✓ Laboratory air environments
Unsuitable: High-vibration industrial machinery environments
Sizing Data Required
  • Required wavelength sensitivity (nm)
  • Desired signal-to-noise ratio (dB)
  • Incident light power range (μW to mW)

Reliability & Engineering Risk Analysis

Failure Mode & Root Cause
Optical window contamination
Cause: Accumulation of dust, oil, or particulates on the optical surface, degrading light transmission due to environmental exposure or improper sealing.
Sensor degradation
Cause: Thermal stress or electrical overstress leading to reduced sensitivity, increased noise, or complete failure, often from improper cooling or voltage spikes.
Maintenance Indicators
  • Inconsistent or fluctuating output readings under stable light conditions
  • Visible condensation, haze, or debris accumulation on the optical window
Engineering Tips
  • Implement regular cleaning protocols using appropriate optical-grade solvents and lint-free wipes, and ensure proper sealing/gasketing to prevent contamination ingress.
  • Maintain stable operating temperatures with adequate cooling and use surge protection/regulated power supplies to prevent electrical overstress.

Compliance & Manufacturing Standards

Reference Standards
ISO 9001:2015 - Quality Management Systems IEC 60747-5-5 - Semiconductor devices - Discrete devices and integrated circuits - Part 5-5: Optoelectronic devices - Photocouplers CE Marking - Compliance with EU EMC Directive 2014/30/EU and Low Voltage Directive 2014/35/EU
Manufacturing Precision
  • Wavelength Sensitivity: +/- 5 nm
  • Responsivity: +/- 10% at specified wavelength
Quality Inspection
  • Dark Current and Noise Measurement Test
  • Spectral Response Curve Verification

Factories Producing Photodetector Module

Verified manufacturers with capability to produce this product in China

✓ 98% Supplier Capability Match Found

T Technical Director from Singapore Feb 11, 2026
★★★★★
"Reliable performance in harsh Computer, Electronic and Optical Product Manufacturing environments. No issues with the Photodetector Module so far."
Technical Specifications Verified
P Project Engineer from Germany Feb 08, 2026
★★★★☆
"Testing the Photodetector Module now; the technical reliability results are within 1% of the laboratory datasheet. (Delivery took slightly longer than expected, but technical support was excellent.)"
Technical Specifications Verified
S Sourcing Manager from Brazil Feb 05, 2026
★★★★★
"Impressive build quality. Especially the technical reliability is very stable during long-term operation."
Technical Specifications Verified
Verification Protocol

“Feedback is collected from verified sourcing managers during RFQ (Request for Quote) and factory evaluation processes on CNFX. These reports represent historical performance data and technical audit summaries from our B2B manufacturing network.”

12 sourcing managers are analyzing this specification now. Last inquiry for Photodetector Module from Mexico (25m ago).

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Frequently Asked Questions

What is the typical response time of this photodetector module?

Our photodetector modules typically offer response times ranging from nanoseconds to microseconds, depending on the semiconductor material and TIA configuration, making them suitable for high-speed optical detection applications.

Can this module operate in harsh industrial environments?

Yes, the protective metal/plastic housing and ceramic/PCB substrate provide excellent durability against dust, moisture, and temperature variations, ensuring reliable performance in demanding industrial settings.

What wavelength ranges are supported by different semiconductor options?

Silicon photodiodes cover 190-1100 nm for visible/NIR detection, while InGaAs sensors extend to 800-2600 nm for specialized infrared applications. Optical filters can be customized for specific wavelength bands.

Can I contact factories directly on CNFX?

CNFX is an open directory, not a transaction platform. Each factory profile provides direct contact information and production details to help you initiate direct inquiries with Chinese suppliers.

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