This page explains how Sense Amplifier is classified within Computer, Electronic and Optical Product Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A circuit that detects and amplifies small voltage differences from memory cells to determine stored data values.
Technical details and manufacturing context for Sense Amplifier
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Supply Voltage | 1.8–3.6 V | Operating range for core logic |
| Input Offset Voltage | ±5 mV | Max offset for reliable sensing |
| Sensing Delay | 0.5–2.0 ns | Time to valid output after enable |
| Operating Temperature Range | -40–85 °C | Industrial grade |
| Input Common Mode Range | 0.2–1.4 V | Relative to supply |
| Current Consumption | 0.5–2.0 mA | Per channel at 25°C |
| Output Drive Capability | 10–50 pF | Load capacitance |
| Package Type | SOT-23-5 | Small footprint for PCBJEDEC MO-178 |
| ESD Protection | ±2 kV | HBM modelIEC 61000-4-2 |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is essential for the following industrial systems and equipment:
| temperature: | -40°C to 125°C |
| response time: | 100ps to 2ns |
| voltage range: | 0.8V to 3.6V |
| signal sensitivity: | 10mV to 500mV differential input |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
2 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.
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The primary function is to detect and amplify small voltage differences from memory cells to determine stored data values. It reads the analog voltage from a memory cell and converts it to a digital logic level (0 or 1) for the memory system.
The supply voltage range is 1.8–3.6 V, and the operating temperature range is -40 to 85 °C (industrial grade). These are reference ranges; actual values depend on the specific model and must be confirmed with the manufacturer.
It connects to the bitline of the memory cell and a reference voltage (complementary bitline or reference cell). During a read operation, it compares the two voltages and amplifies the difference to a full logic level.
The package type follows JEDEC MO-178 (SOT-23-5), and ESD protection is tested per IEC 61000-4-2 (HBM model, ±2 kV). These standards are verification references; compliance must be confirmed with the supplier.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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