Baseplate for IGBT modules providing thermal management and electrical insulation in power electronics systems.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Thickness | 1.0-3.0 mm | |
| Surface Flatness | <10 μm | |
| Dielectric Strength | >10 kV | |
| Thermal Conductivity | 170-400 W/mK | |
| Operating Temperature | -40°C to +150°C | |
| Coefficient Of Thermal Expansion | 4-7 ppm/K |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
A power semiconductor device used for high-power switching in plasma power supplies
A high-capacity pumping unit designed for rapid fluid delivery in emergency cooling applications.
A mechanical device that securely holds and precisely positions workpieces during robotic welding operations.
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The primary function is to provide efficient heat transfer from the semiconductor chips to the cooling system while maintaining electrical insulation between the chips and the heatsink.
Ceramic materials like AlN and Al2O3 offer excellent electrical insulation properties combined with high thermal conductivity, making them ideal for power electronics applications.
Thicker baseplates provide better mechanical stability but may reduce thermal efficiency. Optimal thickness balances structural integrity with thermal performance.
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