IGBT module

01

Read voltage and current ratings with their conditions

Infineon's application note on industrial IGBT module datasheets explains that the permissible collector-emitter voltage VCES is specified at a junction temperature of 25 °C and decreases at lower temperatures; that the DC collector current rating is calculated from the total power dissipation, so the junction and case temperatures must be stated, and current ratings without defined temperatures have no technical meaning; and that the repetitive peak collector current allows the nominal rating to be exceeded briefly, with the datasheet value lower than theory because bond wires, busbars and connectors also limit it. [1]

Duken, a supplier listed here, states its module ranges as 650–1,700 V and 15–1,600 A and gives current at 100 °C: for example, DKG20PI60TE is listed at 600 V, 20 A at 100 °C, 1.65 V VCE(sat) at 25 °C and 5.25 V gate threshold. [2] Compare modules only at the same stated temperatures.

A full module data sheet shows how these ratings sit together. SEMIKRON's SKM400GB12E4 (SEMITRANS 3 half-bridge, IGBT4 and CAL4 diodes, Rev. 4, 2013) gives VCES 1,200 V at 25 °C; IC 616 A at Tc 25 °C and 474 A at Tc 80 °C with Tj 175 °C, against a nominal 400 A; ICRM 1,200 A; a 10 µs short-circuit withstand at 800 V and 150 °C; isolation of 4,000 V AC for 1 minute; case temperature limited to 125 °C and a recommended operating junction range of −40 to +150 °C. [3]

Give the supplier the topology, DC-link voltage, RMS and peak currents, switching frequency, modulation, cooling method and heatsink temperature, package and mounting, gate-drive voltage and resistance, and required lifetime or power cycling.

02

Check thermal resistance, losses and safe operating area

The note describes total power dissipation Ptot as the maximum that can pass through the junction-to-case thermal resistance RthJC, set by the temperature difference between junction and case. Switching energies Eon and Eoff are given per pulse and depend strongly on the gate drive, layout, gate resistance, voltages, currents and junction temperature, so datasheet values only indicate performance in a specific test setup. At turn-off, the chip can switch up to twice nominal current within its blocking voltage, but the module's reverse-bias safe operating area is reduced by internal stray inductance, and voltage spikes must not exceed the rated voltage. [1]

Editorial calculation: dissipation = temperature difference ÷ RthJC. With a junction allowed at 150 °C, a case at 80 °C and RthJC of 0.1 K/W (example values), 70 ÷ 0.1 = 700 W can be dissipated. [1] Use the module's actual RthJC and your heatsink temperature.

The same sheet lists VCE(sat) of 1.80 V (typ.) at 400 A and 25 °C and 2.20 V (typ.) at 150 °C; at 600 V, 400 A and 150 °C, Eon of 33 mJ and Eoff of 56 mJ per pulse, with diode recovery energy Err of 30.5 mJ; RthJC of 0.072 K/W per IGBT and 0.14 K/W per diode, and case-to-sink 0.02 K/W (typ.) per module. [3] It is rated for switching frequencies up to 12 kHz and weighs 325 g. [3]

Editorial calculation: switching at 5 kHz with those figures, one IGBT loses about (33 + 56) mJ × 5,000 ≈ 445 W in switching alone, plus conduction loss of roughly 2.2 V × the average current; at RthJC 0.072 K/W, 445 W raises the junction about 32 K above the case. Real losses scale with current, voltage and duty, so ask for a loss simulation at your operating point. [3]

Editorial calculation: conduction loss is roughly VCE(sat) × current while conducting; for the Duken example, 1.65 V × 20 A ≈ 33 W during conduction at 25 °C values, before switching losses and duty cycle. [2] Ask the supplier for loss simulation at your operating point.

03

Map voltage class to current rating and package

Hitachi Energy's IGBT and diode module range lists each part by VCES, IC, circuit type and package, in voltage classes of 1,200, 1,700, 2,300, 3,300, 4,500 and 6,500 V. The table groups its listed IGBT modules by voltage class; it shows how the highest current available in one package falls as voltage class rises. [4]

The same range lists phase-leg MOSFET modules in LinPak at 1,700 V (2 × 900 and 2 × 1,800 A), 2,300 V (2 × 900 and 2 × 1,800 A) and 3,300 V (2 × 480 to 2 × 1,000 A), and separate diode modules up to 3,600 A at 1,700 V. [4]

Editorial calculation: the highest listed single-IGBT rating falls from 3,600 A at 1,700 V to 1,800 A at 3,300 V, 1,500 A at 4,500 V and 1,000 A at 6,500 V; the product VCES × IC stays between 5.9 and 6.8 million V·A for those four parts. As Infineon's note explains, each IC is only meaningful with its stated case and junction temperatures, so compare those conditions on the individual data sheets before comparing parts across makers. [4] [1]

04

IGBT modules, press-packs and discretes from module makers and component distributors on the linked sites

Greegoo lists IGBT modules from 600 V to 4,500 V; China Resources Microelectronics lists IGBT modules among its power devices; Duken lists half-bridge, chopper, PIM and 1,700 V modules; Hiitio lists IGBT modules and press-pack IGBTs; Sinesemi lists IGBT discretes and modules; YZPST lists IGBT modules with rectifiers; Anxinruo and GNS list IGBT modules among electronic components.

05

IGBT and diode chips, insulated substrate, baseplate, terminals and housing

The terminal row limits current as well as the chips: Infineon explains that the datasheet repetitive peak collector current sits below the theoretical value because bond wires, busbars and connectors also limit it. [1]

06

VCES, collector current at stated temperatures, RthJC, junction temperature, isolation, gate threshold and switching delays for a module order

The example values mix two modules, SEMIKRON's 1,200 V SKM400GB12E4 and Duken's 600 V DKG20PI60TE, so compare a quoted part only at its own stated temperatures and test setup; dimensions and humidity have no published value here. [3] [2]

07

Send the converter, current and cooling data together

Paste it into your enquiry below or into an email to a maker, then replace every bracket.

Converter: [topology; DC-link voltage; output power]
Current: [RMS; peak; overload duration]
Switching: [frequency; modulation; gate drive]
Cooling: [heatsink; coolant; case temperature]
Module: [package; voltage class; current class]
Documents: [datasheet; loss simulation; reliability data]

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