Plasma Power Supply
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This page explains how IGBT Module is classified within Electrical Equipment Manufacturing. Technical values and manufacturer relationships are research references; confirm the current specification and supplier evidence for each order.
A power semiconductor device used for high-power switching in plasma power supplies
Technical details and manufacturing context for IGBT Module
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Collector-Emitter Voltage (V_CES) | 1200–6500 V | Rated blocking voltage for plasma power switchingIEC 60747-9 |
| Collector Current (I_C) | 50–3600 A | Continuous DC current ratingIEC 60747-9 |
| Switching Frequency | 1–50 kHz | Typical range for plasma power supplies |
| Power Loss (P_tot) | 200–2000 W | Maximum allowable power dissipation |
| Junction Temperature (T_j) | -40–150 °C | Operating junction temperature rangeIEC 60747-9 |
| Thermal Resistance (R_th(j-c)) | 0.02–0.5 K/W | Lower is better for heat dissipationIEC 60747-9 |
| Isolation Voltage (V_isol) | 2500–6000 V AC | RMS isolation test voltage for 1 minuteIEC 60747-9 |
| Gate-Emitter Threshold Voltage (V_GE(th)) | 5–7 V | Typical threshold for turn-onIEC 60747-9 |
| Turn-on Delay Time (t_d(on)) | 0.1–1.0 µs | Affects switching lossesIEC 60747-9 |
| Turn-off Delay Time (t_d(off)) | 0.2–2.0 µs | Affects switching lossesIEC 60747-9 |
| Dimensions (L×W×H) | 62×108×30–190×140×80 mm | Package footprint varies with current rating |
| Weight | 150–2000 g | Depends on package and current rating |
| Operating Humidity | 5–95 % RH | Non-condensingIEC 60068-2-78 |
| Ingress Protection (IP) | IP20–IP54 | Higher IP for harsh environmentsIEC 60529 |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is essential for the following industrial systems and equipment:
| pressure: | Atmospheric to 1.5 bar (typical enclosure pressure) |
| other spec: | Maximum switching frequency: 20-50 kHz, Isolation voltage: 2500-6000 V |
| temperature: | -40°C to +150°C (junction temperature) |
Indicative industry ranges for design and RFQ preparation. Confirm the exact figures and applicable standard with the manufacturer before specifying.
Quoted from the published standard.
4 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.
Manufacturer listings support early research and capability understanding. They are not certification, ranking, or transaction guarantees.
A practical evidence checklist for RFQ preparation and supplier evaluation.
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The collector-emitter voltage (V_CES) typically ranges from 1200 V to 6500 V, depending on the specific application and power level. Always confirm the exact rating with the manufacturer for your model.
Switching frequency influences switching losses and thermal management. For plasma power supplies, typical frequencies are 1-50 kHz. Higher frequencies may require better cooling and faster gate drive circuits.
The junction-to-case thermal resistance (R_th(j-c)) typically ranges from 0.02 K/W to 0.5 K/W. Lower values indicate better heat dissipation, which is critical for high-power operation.
Relevant standards include IEC 60747-9 for semiconductor devices, IEC 60068-2-78 for humidity testing, and IEC 60529 for ingress protection. These standards provide reference for verification, but compliance must be confirmed with the manufacturer.
Editorial classification, named public sources where available, and source-reviewed manufacturer records.
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