High-voltage diode for voltage multiplier circuits in industrial applications
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Capacitance | 1-10 pF | |
| Forward Current | 100 mA - 5 A | |
| Breakdown Voltage | 15-120 kV | |
| Forward Voltage Drop | 0.7-1.2 V | |
| Junction Temperature | -55°C to +175°C | |
| Reverse Recovery Time | 50 ns - 1 μs | |
| Peak Inverse Voltage (PIV) | 10-100 kV |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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High-voltage diodes have thicker depletion regions and specialized construction to withstand reverse voltages from 10kV to over 100kV, compared to standard diodes typically rated below 1kV. They feature graded junctions, field plates, and passivation layers to prevent voltage breakdown.
They enable generation of high DC voltages from lower AC inputs without bulky transformers, essential for X-ray equipment, electrostatic precipitators, laser power supplies, and particle accelerators where compact high-voltage sources are required.
Increased temperature reduces breakdown voltage (negative temperature coefficient) and increases leakage current. Silicon carbide diodes maintain better high-temperature performance than silicon diodes due to wider bandgap.
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