INDUSTRY COMPONENT

High-Voltage Diode

High-voltage diode for voltage multiplier circuits in industrial applications

Component Specifications

Definition
A semiconductor device designed to allow current flow in one direction while blocking reverse current at high voltage levels, specifically engineered for voltage multiplier circuits that generate DC voltages higher than the input AC voltage through cascaded rectification stages.
Working Principle
Operates on PN junction semiconductor physics, where forward bias allows electron-hole recombination for current conduction, while reverse bias creates a depletion region that blocks current flow. In voltage multiplier circuits, multiple diodes work with capacitors in ladder configurations (Cockcroft-Walton, Villard circuits) to progressively add voltage peaks from AC input, achieving voltage multiplication through charge pumping and storage mechanisms.
Materials
Silicon (Si) or silicon carbide (SiC) semiconductor wafer with doped regions, aluminum or gold wire bonding, ceramic or epoxy encapsulation, nickel-plated copper leads, glass passivation layer
Technical Parameters
  • Capacitance 1-10 pF
  • Forward Current 100 mA - 5 A
  • Breakdown Voltage 15-120 kV
  • Forward Voltage Drop 0.7-1.2 V
  • Junction Temperature -55°C to +175°C
  • Reverse Recovery Time 50 ns - 1 μs
  • Peak Inverse Voltage (PIV) 10-100 kV
Standards
IEC 60747, MIL-PRF-19500, JEDEC JESD22

Industry Taxonomies & Aliases

Commonly used trade names and technical identifiers for High-Voltage Diode.

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Dielectric breakdown under overvoltage
  • Thermal runaway from excessive current
  • Partial discharge in contaminated environments
  • Mechanical stress cracking from thermal cycling
FMEA Triads
Trigger: Voltage transients exceeding PIV rating
Failure: Catastrophic junction breakdown
Mitigation: Implement snubber circuits, use diodes with 20% voltage margin, install surge protection devices
Trigger: Insufficient heat sinking
Failure: Thermal runaway and permanent damage
Mitigation: Calculate thermal resistance, use proper heatsinks, monitor junction temperature with sensors
Trigger: Contamination on diode surface
Failure: Surface tracking and insulation failure
Mitigation: Apply conformal coating, maintain clean environment, use hermetically sealed packages

Industrial Ecosystem

Compatible With

Interchangeable Parts

Compliance & Inspection

Tolerance
±5% on breakdown voltage, ±10% on forward voltage
Test Method
IEC 60747-1 for semiconductor devices, reverse bias leakage current measured at 80% of rated voltage, high-potential testing per IEC 61010

Buyer Feedback

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Frequently Asked Questions

What is the main difference between standard diodes and high-voltage diodes?

High-voltage diodes have thicker depletion regions and specialized construction to withstand reverse voltages from 10kV to over 100kV, compared to standard diodes typically rated below 1kV. They feature graded junctions, field plates, and passivation layers to prevent voltage breakdown.

Why are voltage multiplier circuits important in industrial applications?

They enable generation of high DC voltages from lower AC inputs without bulky transformers, essential for X-ray equipment, electrostatic precipitators, laser power supplies, and particle accelerators where compact high-voltage sources are required.

How does temperature affect high-voltage diode performance?

Increased temperature reduces breakdown voltage (negative temperature coefficient) and increases leakage current. Silicon carbide diodes maintain better high-temperature performance than silicon diodes due to wider bandgap.

Can I contact factories directly?

Yes, each factory profile provides direct contact information.

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