Miniaturized semiconductor device that measures acceleration forces in precision inertial measurement systems.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Bandwidth | 0.5-5000 Hz | |
| Resolution | 0.1-10 mg | |
| Sensitivity | 0.5-800 mV/g (analog), 0.25-8192 LSB/g (digital) | |
| Package Size | 3x3 mm to 5x5 mm | |
| Noise Density | 25-400 μg/√Hz | |
| Supply Voltage | 1.8V to 5.5V | |
| Output Interface | I2C, SPI, Analog | |
| Measurement Range | ±2g to ±200g | |
| Axis Configuration | 1, 2, or 3-axis | |
| Operating Temperature | -40°C to +125°C |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with MEMS Accelerometer Die.
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The die is the bare silicon chip containing the sensing structures and electronics, while packaged accelerometer includes the die mounted in a protective housing with electrical connections, environmental sealing, and sometimes additional signal conditioning.
Temperature variations cause thermal expansion of materials and changes in electronic properties, leading to bias drift and sensitivity variation. High-quality dies incorporate temperature compensation circuits and use materials with matched thermal coefficients.
Stiction (permanent adhesion of moving parts), fatigue fracture of suspension springs, contamination particles causing mechanical interference, electrostatic discharge damage to circuitry, and hermeticity failure leading to moisture ingress.
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