INDUSTRY COMPONENT

MEMS Accelerometer Die

Miniaturized semiconductor device that measures acceleration forces in precision inertial measurement systems.

Component Specifications

Definition
A MEMS accelerometer die is a micro-fabricated silicon component that detects and measures linear acceleration along one or more axes using capacitive, piezoresistive, or thermal sensing principles. It consists of microscopic mechanical structures (proof masses, springs, and electrodes) integrated with electronic circuitry on a single silicon substrate, enabling precise motion detection in compact form factors for inertial navigation, vibration monitoring, and motion control applications.
Working Principle
Operates based on Newton's second law of motion. When subjected to acceleration, a suspended proof mass within the die deflects relative to fixed electrodes, changing capacitance. This capacitance variation is converted to voltage signals by integrated ASIC circuitry, providing digital or analog output proportional to acceleration magnitude and direction.
Materials
Single-crystal silicon substrate (typically 100-500 μm thick), silicon dioxide insulation layers, aluminum or copper metallization for interconnects, silicon nitride passivation layer, gold or solder bumps for packaging interconnection.
Technical Parameters
ParameterTypical rangeNotes & selection driver
Bandwidth0.5-5000 Hz
Resolution0.1-10 mg
Sensitivity0.5-800 mV/g (analog), 0.25-8192 LSB/g (digital)
Package Size3x3 mm to 5x5 mm
Noise Density25-400 μg/√Hz
Supply Voltage1.8V to 5.5V
Output InterfaceI2C, SPI, Analog
Measurement Range±2g to ±200g
Axis Configuration1, 2, or 3-axis
Operating Temperature-40°C to +125°C

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards
ISO 16063-21, IEC 60747-14-1, JEDEC JESD22-A114

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Mechanical shock exceeding proof mass displacement limits
  • Electrostatic discharge damaging sensitive circuitry
  • Contamination during handling affecting moving parts
  • Thermal stress causing package delamination
  • Solder joint fatigue under vibration
FMEA Triads
Trigger: Excessive mechanical shock during handling or operation
Failure: Fracture of suspension springs or proof mass anchors
Mitigation: Implement shock stops in mechanical design, use protective packaging during transport, limit operational g-range
Trigger: Electrostatic discharge from improper handling
Failure: Gate oxide breakdown in CMOS circuitry, latch-up events
Mitigation: ESD-protected workstations, conductive packaging, on-chip ESD protection diodes
Trigger: Moisture ingress due to hermeticity failure
Failure: Stiction, corrosion of metal traces, parameter drift
Mitigation: Hermetic wafer-level packaging, moisture getters, conformal coating

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance
±0.5% full-scale for sensitivity, ±50 mg for zero-g offset, ±0.01%/°C for temperature coefficient
Test Method
Three-axis precision rate table calibration, temperature cycling (-40°C to +125°C), vibration testing per MIL-STD-810G, shock testing up to 5000g, long-term stability monitoring

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
Verify equipment lists, process limits, capacity, and representative production evidence.
Inspection readiness
Confirm test methods, calibrated equipment, sampling plans, and traceable reports.
Supplier transparency
Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of MEMS Accelerometer Die

Manufacturer profiles associated with MEMS Accelerometer Die.

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Frequently Asked Questions

What is the difference between MEMS accelerometer die and packaged accelerometer?

The die is the bare silicon chip containing the sensing structures and electronics, while packaged accelerometer includes the die mounted in a protective housing with electrical connections, environmental sealing, and sometimes additional signal conditioning.

How does temperature affect MEMS accelerometer performance?

Temperature variations cause thermal expansion of materials and changes in electronic properties, leading to bias drift and sensitivity variation. High-quality dies incorporate temperature compensation circuits and use materials with matched thermal coefficients.

What are common failure modes of MEMS accelerometer dies?

Stiction (permanent adhesion of moving parts), fatigue fracture of suspension springs, contamination particles causing mechanical interference, electrostatic discharge damage to circuitry, and hermeticity failure leading to moisture ingress.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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