INDUSTRY COMPONENT

MEMS Gyroscope Die

Miniaturized silicon-based gyroscope component for angular velocity measurement in precision inertial systems.

Component Specifications

Definition
A MEMS gyroscope die is the core micro-fabricated silicon component that detects and measures angular velocity through Coriolis effect principles. It consists of vibrating proof masses, sensing electrodes, and drive mechanisms etched onto a silicon substrate, typically measuring 1-5mm². This die serves as the fundamental sensing element in IMU modules, converting mechanical motion into electrical signals for navigation, stabilization, and motion tracking applications.
Working Principle
Operates on the Coriolis effect: when the die's vibrating proof masses experience angular rotation, Coriolis forces induce secondary vibrations perpendicular to both the drive motion and rotation axis. These secondary vibrations are detected by capacitive sensing electrodes, with the resulting capacitance changes proportional to angular velocity. The die typically uses electrostatic drive and capacitive sensing with resonant frequencies between 10-50 kHz.
Materials
Single-crystal silicon substrate (typically 100-500 μm thick), silicon dioxide insulation layers, aluminum or copper metallization for electrodes, silicon nitride passivation layer, gold or aluminum bond pads for electrical connections.
Technical Parameters
ParameterTypical rangeNotes & selection driver
Bandwidth10 to 1000 Hz
Package Size1.5×1.5 to 5×5 mm²
Noise Density0.001 to 0.1 °/s/√Hz
Bias Stability0.1 to 10 °/h
Supply Voltage1.8 to 5.0 V
Measurement Range±50 to ±2000 °/s
Resonant Frequency15-30 kHz
Operating Temperature-40 to +85 °C
Scale Factor Accuracy0.1% to 1%

Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.

Standards
ISO 9001, ISO/TS 16949, IEC 60747-14, MIL-STD-883, AEC-Q100

Parent Products

This component is used in the following industrial products

Engineering Analysis

Risks & Mitigation
  • Stiction during operation or storage
  • Mechanical fracture from shock/vibration
  • Electrostatic discharge damage
  • Contamination from packaging processes
  • Thermal stress-induced performance drift
  • Hermetic seal failure in final package
FMEA Triads
Trigger: Particulate contamination during wafer processing
Failure: Increased mechanical damping or complete stiction
Mitigation: Clean room processing (Class 100 or better), particle monitoring, proper handling procedures
Trigger: Electrostatic discharge during handling
Failure: Dielectric breakdown of sensing electrodes
Mitigation: ESD-protected workstations, proper grounding, antistatic packaging materials
Trigger: Mechanical shock during assembly
Failure: Fracture of delicate proof mass structures
Mitigation: Shock-absorbing assembly fixtures, controlled force application, visual inspection

Industrial Ecosystem

Compatible With

Typical Suppliers & Equivalents

Compliance & Inspection

Tolerance
Angular rate measurement accuracy within ±0.5% of full scale, bias stability within specified temperature range, linearity error <0.1% FS
Test Method
Rate table testing for scale factor and bias, temperature cycling (-40°C to +85°C), vibration testing (20-2000 Hz), shock testing (up to 5000 g), long-term stability testing, electrical parameter verification

Procurement Evaluation Criteria

A practical evidence checklist for RFQ preparation and supplier evaluation.

Technical documentation
Request current drawings, revision history, and a signed specification sheet.
Manufacturing capability
Verify equipment lists, process limits, capacity, and representative production evidence.
Inspection readiness
Confirm test methods, calibrated equipment, sampling plans, and traceable reports.
Supplier transparency
Check the legal entity, factory address, ownership, certifications, and direct contacts.

CNFX does not score or rank suppliers. Buyers must verify all claims and documents with the legal manufacturer before ordering.

Manufacturers of MEMS Gyroscope Die

Manufacturer profiles associated with MEMS Gyroscope Die.

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Frequently Asked Questions

What is the difference between MEMS gyroscope die and packaged gyroscope?

The MEMS gyroscope die is the bare silicon sensor element without packaging, while packaged gyroscopes include the die mounted in a protective housing with electrical connections and sometimes integrated ASIC for signal conditioning.

How does temperature affect MEMS gyroscope die performance?

Temperature variations cause changes in silicon mechanical properties and electronic characteristics, leading to bias drift and scale factor errors. High-performance dies incorporate temperature compensation structures or require external temperature sensors and compensation algorithms.

What are typical failure modes of MEMS gyroscope dies?

Common failures include stiction (sticking of moving parts), fracture of delicate structures, electrode degradation, contamination from packaging processes, and electrical overstress damage to sensing circuits.

Data Basis

Editorial classification, named public sources where available, and source-reviewed manufacturer records. See the editorial policy.

Preliminary Technical Classification
This page supports structured research, RFQ preparation, and supplier evaluation. It does not replace buyer-led supplier qualification, standards review, or technical approval.

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