Miniaturized silicon-based gyroscope component for angular velocity measurement in precision inertial systems.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Bandwidth | 10 to 1000 Hz | |
| Package Size | 1.5×1.5 to 5×5 mm² | |
| Noise Density | 0.001 to 0.1 °/s/√Hz | |
| Bias Stability | 0.1 to 10 °/h | |
| Supply Voltage | 1.8 to 5.0 V | |
| Measurement Range | ±50 to ±2000 °/s | |
| Resonant Frequency | 15-30 kHz | |
| Operating Temperature | -40 to +85 °C | |
| Scale Factor Accuracy | 0.1% to 1% |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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Manufacturer profiles associated with MEMS Gyroscope Die.
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The MEMS gyroscope die is the bare silicon sensor element without packaging, while packaged gyroscopes include the die mounted in a protective housing with electrical connections and sometimes integrated ASIC for signal conditioning.
Temperature variations cause changes in silicon mechanical properties and electronic characteristics, leading to bias drift and scale factor errors. High-performance dies incorporate temperature compensation structures or require external temperature sensors and compensation algorithms.
Common failures include stiction (sticking of moving parts), fracture of delicate structures, electrode degradation, contamination from packaging processes, and electrical overstress damage to sensing circuits.
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