Semiconductor chip for laser diodes enabling precise light emission control in industrial applications.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rise Time | <1ns | |
| Wavelength | 405nm to 2000nm | |
| Output Power | 5mW to 10W | |
| Package Type | TO-can, Butterfly, DIP, SMD | |
| Beam Divergence | 10° to 40° | |
| Operating Voltage | 1.8V to 5V | |
| Threshold Current | 10mA to 500mA | |
| Operating Temperature | -40°C to 85°C |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
A semiconductor device that emits coherent light through stimulated emission, used as the light source in particulate matter sensors.
An optical component that generates and emits light, typically coherent or specific-wavelength illumination, for sensing applications.
A component that generates infrared light for concentration measurement in sensors.
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3 companies list this product among what they make. Company figures are quoted from each company's own website; every card states where the relationship came from.
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The wavelength is primarily determined by the bandgap energy of the semiconductor material and the quantum well structure. Different materials emit at specific wavelengths: GaAs-based chips emit around 800-900nm, InP-based around 1300-1550nm, and GaN-based around 405-450nm.
Temperature increases cause wavelength drift (typically 0.3nm/°C), increased threshold current, reduced output power, and decreased efficiency. Proper thermal management is critical for stable operation.
Properly operated semiconductor laser chips can achieve 10,000 to 100,000 hours of operation. Lifespan depends on operating conditions, particularly temperature, current density, and optical feedback levels.
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