Semiconductor die is the core functional element of power semiconductor devices, fabricated on a silicon wafer to perform switching, amplification, or rectification functions.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Die Size | 2mm x 2mm to 15mm x 15mm | |
| Thickness | 100μm to 500μm | |
| On Resistance | 1mΩ to 100Ω | |
| Current Rating | 1A to 1000A | |
| Breakdown Voltage | 50V to 6500V | |
| Junction Temperature | Up to 200°C | |
| Operating Temperature | -55°C to 175°C |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
Electronic components designed to control and convert electrical power in high-power applications.
Electronic switching device that controls high-power electrical circuits using semiconductor technology
The active component within a voltage regulator IC that controls the output voltage by adjusting its resistance.
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A semiconductor die refers specifically to the unencapsulated piece of semiconductor material containing the circuit, while a chip typically refers to the packaged component ready for use in electronic systems.
Dies undergo electrical testing at wafer level using probe stations to verify parameters like breakdown voltage, leakage current, and functionality before dicing and packaging.
Common failure modes include thermal overstress, electrostatic discharge (ESD), latch-up, metallization migration, and contamination during fabrication.
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