A semiconductor junction is the interface between p-type and n-type semiconductor materials within a photodiode, enabling light-to-current conversion.
| Parameter | Typical range | Notes & selection driver |
|---|---|---|
| Rise Time | 1-100 ns | |
| Dark Current | 1 nA to 10 μA | |
| Responsivity | 0.5-1.0 A/W | |
| Wavelength Range | 400-1100 nm (Si), 800-1700 nm (InGaAs) | |
| Breakdown Voltage | 20-100 V | |
| Junction Capacitance | 1-100 pF |
Ranges are indicative industry figures for RFQ preparation, not a supplier commitment. Confirm every value and standard with the legal manufacturer before ordering.
This component is used in the following industrial products
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It converts incident light into electrical current by separating electron-hole pairs generated in the depletion region.
Doping creates p-type and n-type regions with excess holes or electrons, forming the junction and establishing the internal electric field essential for charge separation.
Silicon for visible to near-infrared, germanium for infrared, and III-V compounds like GaAs and InGaAs for specific wavelength optimizations.
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